Excitation front propagation in a semiconductor induced by high-intensity femtosecond laser pulses

Alex Schülzgen; Nasser Peyghambarian

doi:10.1117/12.316727

Excitation front propagation in a semiconductor induced by high-intensity femtosecond laser pulses

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the excitation and propagation of an exciton density front inside a semiconductor that is characterized by high absorption and large optical nonlinearity. Femtosecond optical pulses are used for both the excitation of the density front and the probe of the front propagation. We analyze in detail the spectra of reflected probe pulses that carry information about the propagating density front due to partial internal reflection of light at the boundary between regions of high and low excitation density. Time resolved data show that the Doppler shift of the internal reflection is limited to the duration of the pump pulse indicating the highly transient character of the exciton front propagation.

Original language	English (US)
Pages (from-to)	740-747
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3283
DOIs	https://doi.org/10.1117/12.316727
State	Published - 1998
Event	Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: Jan 26 1998 → Jan 26 1998

Keywords

Absorption saturation
Excitation front
Front propagation
Internal reflection
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.316727

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title = "Excitation front propagation in a semiconductor induced by high-intensity femtosecond laser pulses",

abstract = "We report on the excitation and propagation of an exciton density front inside a semiconductor that is characterized by high absorption and large optical nonlinearity. Femtosecond optical pulses are used for both the excitation of the density front and the probe of the front propagation. We analyze in detail the spectra of reflected probe pulses that carry information about the propagating density front due to partial internal reflection of light at the boundary between regions of high and low excitation density. Time resolved data show that the Doppler shift of the internal reflection is limited to the duration of the pump pulse indicating the highly transient character of the exciton front propagation.",

keywords = "Absorption saturation, Excitation front, Front propagation, Internal reflection, Semiconductor",

author = "Alex Sch{\"u}lzgen and Nasser Peyghambarian",

year = "1998",

doi = "10.1117/12.316727",

language = "English (US)",

volume = "3283",

pages = "740--747",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Physics and Simulation of Optoelectronic Devices VI ; Conference date: 26-01-1998 Through 26-01-1998",

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TY - JOUR

T1 - Excitation front propagation in a semiconductor induced by high-intensity femtosecond laser pulses

AU - Schülzgen, Alex

AU - Peyghambarian, Nasser

PY - 1998

Y1 - 1998

N2 - We report on the excitation and propagation of an exciton density front inside a semiconductor that is characterized by high absorption and large optical nonlinearity. Femtosecond optical pulses are used for both the excitation of the density front and the probe of the front propagation. We analyze in detail the spectra of reflected probe pulses that carry information about the propagating density front due to partial internal reflection of light at the boundary between regions of high and low excitation density. Time resolved data show that the Doppler shift of the internal reflection is limited to the duration of the pump pulse indicating the highly transient character of the exciton front propagation.

AB - We report on the excitation and propagation of an exciton density front inside a semiconductor that is characterized by high absorption and large optical nonlinearity. Femtosecond optical pulses are used for both the excitation of the density front and the probe of the front propagation. We analyze in detail the spectra of reflected probe pulses that carry information about the propagating density front due to partial internal reflection of light at the boundary between regions of high and low excitation density. Time resolved data show that the Doppler shift of the internal reflection is limited to the duration of the pump pulse indicating the highly transient character of the exciton front propagation.

KW - Absorption saturation

KW - Excitation front

KW - Front propagation

KW - Internal reflection

KW - Semiconductor

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DO - 10.1117/12.316727

M3 - Conference article

AN - SCOPUS:57649136573

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VL - 3283

SP - 740

EP - 747

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices VI

Y2 - 26 January 1998 through 26 January 1998

ER -

Excitation front propagation in a semiconductor induced by high-intensity femtosecond laser pulses

Abstract

Keywords

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