Excitation and de-excitation of erbium ions in semiconductor matrices

I. N. Yassievich; M. S. Bresler; O. B. Gusev; G. Khitrova

doi:10.4028/www.scientific.net/msf.258-263.1595

Excitation and de-excitation of erbium ions in semiconductor matrices

I. N. Yassievich, M. S. Bresler, O. B. Gusev, G. Khitrova

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

Abstract

We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.

Original language	English (US)
Pages (from-to)	1595-1600
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	9993
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.1595
State	Published - 1997

Keywords

Erbium ions
Excitation of photoluminescence
Semiconductor matrices

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.4028/www.scientific.net/msf.258-263.1595

Cite this

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title = "Excitation and de-excitation of erbium ions in semiconductor matrices",

abstract = "We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.",

keywords = "Erbium ions, Excitation of photoluminescence, Semiconductor matrices",

author = "Yassievich, {I. N.} and Bresler, {M. S.} and Gusev, {O. B.} and G. Khitrova",

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doi = "10.4028/www.scientific.net/msf.258-263.1595",

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AU - Yassievich, I. N.

AU - Bresler, M. S.

AU - Gusev, O. B.

AU - Khitrova, G.

PY - 1997

Y1 - 1997

N2 - We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.

AB - We have considered defect-related Auger excitation and de-excitation of erbium ions in semiconductor matrices assisted by multiphonon transitions. The results are applied to explanation of temperature quenching of erbium luminescence in AlGaAs and amorphous silicon.

KW - Erbium ions

KW - Excitation of photoluminescence

KW - Semiconductor matrices

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Excitation and de-excitation of erbium ions in semiconductor matrices

Abstract

Keywords

ASJC Scopus subject areas

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