TY - JOUR
T1 - Evolution of microstructure during annealing of low-dose SIMOX wafers implanted at 65 keV
AU - Johnson, B.
AU - Jeoung, Jun Sik
AU - Anderson, P.
AU - Seraphin, Supapan
N1 - Funding Information:
The authors would like to thank Gary Chandler for AES measurements and Professor L. McIntyre, Physics Dept., The University of Arizona for RBS measurements. This work is supported by the National Science Foundation, Grant DMR 0072955 and Ibis Technology Corporati on, Danvers, MA 01923.
PY - 2002/5
Y1 - 2002/5
N2 - The microstructural changes that occur during annealing of ultra-thin oxygen-implanted silicon-on-insulator have been studied using transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). Silicon substrates were implanted at 65 kev with a dose of 4.5 × 1017 O+ cm-2, followed by annealing at various temperatures. TEM results show that the defects observed in the as-implanted material (stacking faults and {1 1 3} defects) were reduced after annealing at 900 °C for 2 h and were eliminated after annealing at 1100°C for 2 h. A continuous buried oxide (BOX) layer was formed after annealing at 1300°C for 6h. Numerous silicon islands were present in the BOX layer. The silicon islands can be traced to a precursor structure that developed at the implantation step. RBS results indicate that the crystallinity of the top Si layer is significantly restored after annealing at 1100 °C for 2 h and is completely restored after annealing at 1300°C for 6 h. It was also found through AES analysis that the redistribution of oxygen during annealing is initiated at 1100°C.
AB - The microstructural changes that occur during annealing of ultra-thin oxygen-implanted silicon-on-insulator have been studied using transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). Silicon substrates were implanted at 65 kev with a dose of 4.5 × 1017 O+ cm-2, followed by annealing at various temperatures. TEM results show that the defects observed in the as-implanted material (stacking faults and {1 1 3} defects) were reduced after annealing at 900 °C for 2 h and were eliminated after annealing at 1100°C for 2 h. A continuous buried oxide (BOX) layer was formed after annealing at 1300°C for 6h. Numerous silicon islands were present in the BOX layer. The silicon islands can be traced to a precursor structure that developed at the implantation step. RBS results indicate that the crystallinity of the top Si layer is significantly restored after annealing at 1100 °C for 2 h and is completely restored after annealing at 1300°C for 6 h. It was also found through AES analysis that the redistribution of oxygen during annealing is initiated at 1100°C.
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U2 - 10.1023/A:1015528226182
DO - 10.1023/A:1015528226182
M3 - Article
AN - SCOPUS:0036575669
SN - 0957-4522
VL - 13
SP - 303
EP - 308
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 5
ER -