Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts

M. E. Donovan; A. Schülzgen; J. Lee; R. Binder; L. Romyantsev; Z. S. Yang; N. Peyghambarian; N. H. Kwong; R. Takayama

doi:10.1109/QELS.2001.962204

Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts

M. E. Donovan, A. Schülzgen, J. Lee, R. Binder, L. Romyantsev, Z. S. Yang, N. Peyghambarian, N. H. Kwong, R. Takayama

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Summary form only given. The optical Stark shift in semiconductors transient nonlinearity which helps to understand fundamental ultrafast microscopic processes. Studies of similarities and differences between optical Stark shifts in atomic two-level systems and those observed in semiconductors led to the understanding of semiconductor-specific many-body effects such as biexcitons and Coulomb memory effects. While the two-level analogies of Stark shifts in semiconductors have been successfully exploited, the question of what one can learn from a comparison of coherent atomic three-level effects with optical Stark shifts in semiconductors using the coherent coupling between heavy-hole (hh) and light-hole (lh) excitons has not been addressed so far. In atomic three-level systems, nonradiative or Raman coherences are the foundation of important nonlinear optical effects such as electromagnetically-induced transparency and lasing without inversion. We investigate these coherences in an InGaAs multiple quantum well utilizing coherently-coupled Stark shift measurements of the hh- and lh-exciton resonances.

Original language	English (US)
Title of host publication	Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	249-250
Number of pages	2
ISBN (Electronic)	155752663X, 9781557526632
DOIs	https://doi.org/10.1109/QELS.2001.962204
State	Published - 2001
Event	Quantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States Duration: May 6 2001 → May 11 2001

Publication series

Name	Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2001
Country/Territory	United States
City	Baltimore
Period	5/6/01 → 5/11/01

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

Access to Document

10.1109/QELS.2001.962204

Cite this

Donovan, M. E., Schülzgen, A., Lee, J., Binder, R., Romyantsev, L., Yang, Z. S., Peyghambarian, N., Kwong, N. H., & Takayama, R. (2001). Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 249-250). Article 962204 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.962204

Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts. / Donovan, M. E.; Schülzgen, A.; Lee, J. et al.
Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 249-250 962204 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Donovan, ME, Schülzgen, A, Lee, J, Binder, R, Romyantsev, L, Yang, ZS, Peyghambarian, N , Kwong, NH & Takayama, R 2001, Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 962204, Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001, Institute of Electrical and Electronics Engineers Inc., pp. 249-250, Quantum Electronics and Laser Science Conference, QELS 2001, Baltimore, United States, 5/6/01. https://doi.org/10.1109/QELS.2001.962204

Donovan ME, Schülzgen A, Lee J, Binder R, Romyantsev L, Yang ZS et al. Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 249-250. 962204. (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001). doi: 10.1109/QELS.2001.962204

Donovan, M. E. ; Schülzgen, A. ; Lee, J. et al. / Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts. Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 249-250 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001).

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AU - Binder, R.

AU - Romyantsev, L.

AU - Yang, Z. S.

AU - Peyghambarian, N.

AU - Kwong, N. H.

AU - Takayama, R.

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N2 - Summary form only given. The optical Stark shift in semiconductors transient nonlinearity which helps to understand fundamental ultrafast microscopic processes. Studies of similarities and differences between optical Stark shifts in atomic two-level systems and those observed in semiconductors led to the understanding of semiconductor-specific many-body effects such as biexcitons and Coulomb memory effects. While the two-level analogies of Stark shifts in semiconductors have been successfully exploited, the question of what one can learn from a comparison of coherent atomic three-level effects with optical Stark shifts in semiconductors using the coherent coupling between heavy-hole (hh) and light-hole (lh) excitons has not been addressed so far. In atomic three-level systems, nonradiative or Raman coherences are the foundation of important nonlinear optical effects such as electromagnetically-induced transparency and lasing without inversion. We investigate these coherences in an InGaAs multiple quantum well utilizing coherently-coupled Stark shift measurements of the hh- and lh-exciton resonances.

AB - Summary form only given. The optical Stark shift in semiconductors transient nonlinearity which helps to understand fundamental ultrafast microscopic processes. Studies of similarities and differences between optical Stark shifts in atomic two-level systems and those observed in semiconductors led to the understanding of semiconductor-specific many-body effects such as biexcitons and Coulomb memory effects. While the two-level analogies of Stark shifts in semiconductors have been successfully exploited, the question of what one can learn from a comparison of coherent atomic three-level effects with optical Stark shifts in semiconductors using the coherent coupling between heavy-hole (hh) and light-hole (lh) excitons has not been addressed so far. In atomic three-level systems, nonradiative or Raman coherences are the foundation of important nonlinear optical effects such as electromagnetically-induced transparency and lasing without inversion. We investigate these coherences in an InGaAs multiple quantum well utilizing coherently-coupled Stark shift measurements of the hh- and lh-exciton resonances.

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Evidence for intervalence band coherences in semiconductors via coherently coupled optical Stark shifts

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