Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques

B. G. Potter; D. Dimos; M. B. Sinclair; S. Lockwood

doi:10.1080/10584589508013579

Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques

B. G. Potter, D. Dimos, M. B. Sinclair, S. Lockwood

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Reflection ellipsometry and computational modeling are used to examine electro-optic (EO) effects in a PZT (30/70) thin film. The combined influences of thin film etalon effects, the optical configuration used to measure electro-optic changes in the PZT/electrode thin film stack, and incoherent scattering within the layer structure are found to significantly influence the corresponding intensity modulation under an ac field. The impact of these findings on design considerations for EO-based devices and the use of photometric ellipsometry to characterize these materials is discussed.

Original language	English (US)
Pages (from-to)	59-68
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	11
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589508013579
State	Published - Nov 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584589508013579

Cite this

@article{75c2543bb9484aa7a2bbb975c7fbdcc9,

title = "Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques",

abstract = "Reflection ellipsometry and computational modeling are used to examine electro-optic (EO) effects in a PZT (30/70) thin film. The combined influences of thin film etalon effects, the optical configuration used to measure electro-optic changes in the PZT/electrode thin film stack, and incoherent scattering within the layer structure are found to significantly influence the corresponding intensity modulation under an ac field. The impact of these findings on design considerations for EO-based devices and the use of photometric ellipsometry to characterize these materials is discussed.",

author = "Potter, {B. G.} and D. Dimos and Sinclair, {M. B.} and S. Lockwood",

year = "1995",

month = nov,

doi = "10.1080/10584589508013579",

language = "English (US)",

volume = "11",

pages = "59--68",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques

AU - Potter, B. G.

AU - Dimos, D.

AU - Sinclair, M. B.

AU - Lockwood, S.

PY - 1995/11

Y1 - 1995/11

N2 - Reflection ellipsometry and computational modeling are used to examine electro-optic (EO) effects in a PZT (30/70) thin film. The combined influences of thin film etalon effects, the optical configuration used to measure electro-optic changes in the PZT/electrode thin film stack, and incoherent scattering within the layer structure are found to significantly influence the corresponding intensity modulation under an ac field. The impact of these findings on design considerations for EO-based devices and the use of photometric ellipsometry to characterize these materials is discussed.

AB - Reflection ellipsometry and computational modeling are used to examine electro-optic (EO) effects in a PZT (30/70) thin film. The combined influences of thin film etalon effects, the optical configuration used to measure electro-optic changes in the PZT/electrode thin film stack, and incoherent scattering within the layer structure are found to significantly influence the corresponding intensity modulation under an ac field. The impact of these findings on design considerations for EO-based devices and the use of photometric ellipsometry to characterize these materials is discussed.

UR - http://www.scopus.com/inward/record.url?scp=18744369178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744369178&partnerID=8YFLogxK

U2 - 10.1080/10584589508013579

DO - 10.1080/10584589508013579

M3 - Article

AN - SCOPUS:18744369178

SN - 1058-4587

VL - 11

SP - 59

EP - 68

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Evaluation of electro-optic phenomena in ferroelectric thin films using ellipsometric techniques

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this