Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

L. A. Coldren; T. L. Koch; T. J. Bridges; E. G. Burkhardt; B. I. Miller; J. A. Rentschler

doi:10.1063/1.95852

Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

L. A. Coldren
, T. L. Koch
, T. J. Bridges
, E. G. Burkhardt
, B. I. Miller
, J. A. Rentschler

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.

Original language	English (US)
Pages (from-to)	5-7
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	1
DOIs	https://doi.org/10.1063/1.95852
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.95852

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title = "Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm",

abstract = "The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.",

author = "Coldren, \{L. A.\} and Koch, \{T. L.\} and Bridges, \{T. J.\} and Burkhardt, \{E. G.\} and Miller, \{B. I.\} and Rentschler, \{J. A.\}",

year = "1985",

doi = "10.1063/1.95852",

language = "English (US)",

volume = "46",

pages = "5--7",

journal = "Applied Physics Letters",

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T1 - Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

AU - Coldren, L. A.

AU - Koch, T. L.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Miller, B. I.

AU - Rentschler, J. A.

PY - 1985

Y1 - 1985

N2 - The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.

AB - The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.

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UR - https://www.scopus.com/pages/publications/0021818156#tab=citedBy

U2 - 10.1063/1.95852

DO - 10.1063/1.95852

M3 - Article

AN - SCOPUS:0021818156

SN - 0003-6951

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SP - 5

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

Abstract

ASJC Scopus subject areas

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