Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

L. A. Coldren; T. L. Koch; T. J. Bridges; E. G. Burkhardt; B. I. Miller; J. A. Rentschler

doi:10.1063/1.95852

Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

L. A. Coldren, T. L. Koch, T. J. Bridges, E. G. Burkhardt, B. I. Miller, J. A. Rentschler

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9 Scopus citations

Abstract

The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.

Original language	English (US)
Pages (from-to)	5-7
Number of pages	3
Journal	Applied Physics Letters
Volume	46
Issue number	1
DOIs	https://doi.org/10.1063/1.95852
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm",

abstract = "The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.",

author = "Coldren, {L. A.} and Koch, {T. L.} and Bridges, {T. J.} and Burkhardt, {E. G.} and Miller, {B. I.} and Rentschler, {J. A.}",

year = "1985",

doi = "10.1063/1.95852",

language = "English (US)",

volume = "46",

pages = "5--7",

journal = "Applied Physics Letters",

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T1 - Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

AU - Coldren, L. A.

AU - Koch, T. L.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

AU - Miller, B. I.

AU - Rentschler, J. A.

PY - 1985

Y1 - 1985

N2 - The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.

AB - The fabrication and characterization of a new two-section etched-groove laser that uses vapor phase regrowth are given. A single undoped InP regrowth forms the buried heterostructure laser sidewalls and facilitates the formation of high-quality single-material etched-mirror facets. Low threshold (∼30 mA), tunable single-wavelength operation results at 1.55 μm.

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M3 - Article

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JF - Applied Physics Letters

IS - 1

ER -

Etched-groove coupled-cavity vapor-phase-transported window lasers at 1.55 μm

Abstract

ASJC Scopus subject areas

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