Etch Rate of Silicon and Silicon Dioxide in Ammonia-Peroxide Solutions Measured by Quartz Crystal Microbalance Technique

Kyeong T. Lee; Srini Raghavan

doi:10.1149/1.1390773

Etch Rate of Silicon and Silicon Dioxide in Ammonia-Peroxide Solutions Measured by Quartz Crystal Microbalance Technique

Kyeong T. Lee, Srini Raghavan

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The etch rate of sputter coated silicon and thermally grown silica in ammonia-peroxide and ammonia solutions has been investigated using a quartz crystal microbalance (QCM) technique. The results obtained have been compared with literature results using more conventional techniques to show that a QCM is a valuable in situ measurement technique to follow very small etch rates.

Original language	English (US)
Pages (from-to)	172-174
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	2-4
DOIs	https://doi.org/10.1149/1.1390773
State	Published - Apr 1999

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Etch Rate of Silicon and Silicon Dioxide in Ammonia-Peroxide Solutions Measured by Quartz Crystal Microbalance Technique",

abstract = "The etch rate of sputter coated silicon and thermally grown silica in ammonia-peroxide and ammonia solutions has been investigated using a quartz crystal microbalance (QCM) technique. The results obtained have been compared with literature results using more conventional techniques to show that a QCM is a valuable in situ measurement technique to follow very small etch rates.",

author = "Lee, {Kyeong T.} and Srini Raghavan",

year = "1999",

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doi = "10.1149/1.1390773",

language = "English (US)",

volume = "2",

pages = "172--174",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "2-4",

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T1 - Etch Rate of Silicon and Silicon Dioxide in Ammonia-Peroxide Solutions Measured by Quartz Crystal Microbalance Technique

AU - Lee, Kyeong T.

AU - Raghavan, Srini

PY - 1999/4

Y1 - 1999/4

N2 - The etch rate of sputter coated silicon and thermally grown silica in ammonia-peroxide and ammonia solutions has been investigated using a quartz crystal microbalance (QCM) technique. The results obtained have been compared with literature results using more conventional techniques to show that a QCM is a valuable in situ measurement technique to follow very small etch rates.

AB - The etch rate of sputter coated silicon and thermally grown silica in ammonia-peroxide and ammonia solutions has been investigated using a quartz crystal microbalance (QCM) technique. The results obtained have been compared with literature results using more conventional techniques to show that a QCM is a valuable in situ measurement technique to follow very small etch rates.

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M3 - Article

AN - SCOPUS:0033116344

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2-4

ER -

Etch Rate of Silicon and Silicon Dioxide in Ammonia-Peroxide Solutions Measured by Quartz Crystal Microbalance Technique

Abstract

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