Estimating the effective pressure on patterned wafers during STI CMP

J. Sorooshian; L. Borucki; R. Timon; D. Stein; D. Boning; D. Hetherington; A. Philipossian

doi:10.1149/1.1785933

Estimating the effective pressure on patterned wafers during STI CMP

J. Sorooshian, L. Borucki, R. Timon, D. Stein, D. Boning, D. Hetherington, A. Philipossian

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Removal rate results obtained from a 150 mm Speedfam-IPEC 472 polisher, coupled with a proven removal rate model has allowed for the determination of effective pressure (i.e., the actual pressure exerted on the structures of a patterned wafer) during chemical mechanical penalization (CMP) of high-density plasma-filled shallow trench isolation (STI) wafers. Results showed that the ratio of derived effective pressure to applied wafer pressure was 2.2, 1.7, and 1.3 for 10, 50, and 90% density wafers, respectively. The relative consistency of these ratios indicates that the effective pressure experienced during polishing is not impacted by pattern density in a proportionate manner.

Original language	English (US)
Pages (from-to)	G204-G206
Journal	Electrochemical and Solid-State Letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1149/1.1785933
State	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "Removal rate results obtained from a 150 mm Speedfam-IPEC 472 polisher, coupled with a proven removal rate model has allowed for the determination of effective pressure (i.e., the actual pressure exerted on the structures of a patterned wafer) during chemical mechanical penalization (CMP) of high-density plasma-filled shallow trench isolation (STI) wafers. Results showed that the ratio of derived effective pressure to applied wafer pressure was 2.2, 1.7, and 1.3 for 10, 50, and 90% density wafers, respectively. The relative consistency of these ratios indicates that the effective pressure experienced during polishing is not impacted by pattern density in a proportionate manner.",

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TY - JOUR

T1 - Estimating the effective pressure on patterned wafers during STI CMP

AU - Sorooshian, J.

AU - Borucki, L.

AU - Timon, R.

AU - Stein, D.

AU - Boning, D.

AU - Hetherington, D.

AU - Philipossian, A.

PY - 2004

Y1 - 2004

N2 - Removal rate results obtained from a 150 mm Speedfam-IPEC 472 polisher, coupled with a proven removal rate model has allowed for the determination of effective pressure (i.e., the actual pressure exerted on the structures of a patterned wafer) during chemical mechanical penalization (CMP) of high-density plasma-filled shallow trench isolation (STI) wafers. Results showed that the ratio of derived effective pressure to applied wafer pressure was 2.2, 1.7, and 1.3 for 10, 50, and 90% density wafers, respectively. The relative consistency of these ratios indicates that the effective pressure experienced during polishing is not impacted by pattern density in a proportionate manner.

AB - Removal rate results obtained from a 150 mm Speedfam-IPEC 472 polisher, coupled with a proven removal rate model has allowed for the determination of effective pressure (i.e., the actual pressure exerted on the structures of a patterned wafer) during chemical mechanical penalization (CMP) of high-density plasma-filled shallow trench isolation (STI) wafers. Results showed that the ratio of derived effective pressure to applied wafer pressure was 2.2, 1.7, and 1.3 for 10, 50, and 90% density wafers, respectively. The relative consistency of these ratios indicates that the effective pressure experienced during polishing is not impacted by pattern density in a proportionate manner.

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Estimating the effective pressure on patterned wafers during STI CMP

Abstract

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