Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

O. B. Gusev; B. Ya Ber; M. S. Bresler; B. P. Zakharchenya; I. N. Yassievich; G. Khitrova; H. M. Gibbs; D. P. Prineas; E. K. Lindmark; V. F. Masterov

doi:10.1134/1.1130808

Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

O. B. Gusev, B. Ya Ber, M. S. Bresler, B. P. Zakharchenya, I. N. Yassievich, G. Khitrova, H. M. Gibbs, D. P. Prineas, E. K. Lindmark, V. F. Masterov

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

Abstract

Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the course of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanced vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorporating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters.

Original language	English (US)
Pages (from-to)	484-488
Number of pages	5
Journal	Physics of the Solid State
Volume	41
Issue number	3
DOIs	https://doi.org/10.1134/1.1130808
State	Published - Mar 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{de683917da5847d88166125d2b30511a,

title = "Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures",

abstract = "Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the course of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanced vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorporating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters.",

author = "Gusev, {O. B.} and Ber, {B. Ya} and Bresler, {M. S.} and Zakharchenya, {B. P.} and Yassievich, {I. N.} and G. Khitrova and Gibbs, {H. M.} and Prineas, {D. P.} and Lindmark, {E. K.} and Masterov, {V. F.}",

note = "Funding Information: Support of the Russian Fund for Fundamental Research (Grant 98-02-18246), Ministry of Science of the RF (Grant 97-1036), and AFOSR (Grant F49620-94-1-0390), ARPA, and NSF Lightwave Technology is gratefully acknowledged.",

year = "1999",

month = mar,

doi = "10.1134/1.1130808",

language = "English (US)",

volume = "41",

pages = "484--488",

journal = "Physics of the Solid State",

issn = "1063-7834",

publisher = "Pleiades Publishing",

number = "3",

}

TY - JOUR

T1 - Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

AU - Gusev, O. B.

AU - Ber, B. Ya

AU - Bresler, M. S.

AU - Zakharchenya, B. P.

AU - Yassievich, I. N.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Prineas, D. P.

AU - Lindmark, E. K.

AU - Masterov, V. F.

N1 - Funding Information: Support of the Russian Fund for Fundamental Research (Grant 98-02-18246), Ministry of Science of the RF (Grant 97-1036), and AFOSR (Grant F49620-94-1-0390), ARPA, and NSF Lightwave Technology is gratefully acknowledged.

PY - 1999/3

Y1 - 1999/3

N2 - Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the course of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanced vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorporating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters.

AB - Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the course of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanced vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorporating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters.

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DO - 10.1134/1.1130808

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SN - 1063-7834

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JO - Physics of the Solid State

JF - Physics of the Solid State

IS - 3

ER -

Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

Abstract

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