Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

O. B. Gusev, B. Ya Ber, M. S. Bresler, B. P. Zakharchenya, I. N. Yassievich, G. Khitrova, H. M. Gibbs, D. P. Prineas, E. K. Lindmark, V. F. Masterov

Research output: Contribution to journalArticlepeer-review


Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the course of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanced vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorporating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters.

Original languageEnglish (US)
Pages (from-to)484-488
Number of pages5
JournalPhysics of the Solid State
Issue number3
StatePublished - Mar 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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