Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Eric K. Lindmark; John P. Prineas; Galina Khitrova; Hyatt M. Gibbs; Oleg B. Gusev; Boris J. Ber; Mikhail S. Bresler; Irina N. Yassievich; B. P. Zakharchenya; V. F. Masterov

doi:10.1117/12.271154

Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Eric K. Lindmark, John P. Prineas, Galina Khitrova, Hyatt M. Gibbs, Oleg B. Gusev, Boris J. Ber, Mikhail S. Bresler, Irina N. Yassievich, B. P. Zakharchenya, V. F. Masterov

Optical Sciences, College of

Research output: Contribution to journal › Conference article › peer-review

Abstract

Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.

Original language	English (US)
Pages (from-to)	2-7
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2996
DOIs	https://doi.org/10.1117/12.271154
State	Published - 1997
Event	Rare-Earth-Doped Devices - San Jose, CA, United States Duration: Feb 10 1997 → Feb 10 1997

Keywords

AlGaAs
Diffusion
Er
Erbium doping
GaAs
Interdiffusion
Photoluminescence
Quantum wells
SIMS
Semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.271154

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title = "Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures",

abstract = "Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.",

keywords = "AlGaAs, Diffusion, Er, Erbium doping, GaAs, Interdiffusion, Photoluminescence, Quantum wells, SIMS, Semiconductor",

author = "Lindmark, {Eric K.} and Prineas, {John P.} and Galina Khitrova and Gibbs, {Hyatt M.} and Gusev, {Oleg B.} and Ber, {Boris J.} and Bresler, {Mikhail S.} and Yassievich, {Irina N.} and Zakharchenya, {B. P.} and Masterov, {V. F.}",

year = "1997",

doi = "10.1117/12.271154",

language = "English (US)",

volume = "2996",

pages = "2--7",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Rare-Earth-Doped Devices ; Conference date: 10-02-1997 Through 10-02-1997",

}

TY - JOUR

T1 - Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

AU - Lindmark, Eric K.

AU - Prineas, John P.

AU - Khitrova, Galina

AU - Gibbs, Hyatt M.

AU - Gusev, Oleg B.

AU - Ber, Boris J.

AU - Bresler, Mikhail S.

AU - Yassievich, Irina N.

AU - Zakharchenya, B. P.

AU - Masterov, V. F.

PY - 1997

Y1 - 1997

N2 - Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.

AB - Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.

KW - AlGaAs

KW - Diffusion

KW - Er

KW - Erbium doping

KW - GaAs

KW - Interdiffusion

KW - Photoluminescence

KW - Quantum wells

KW - SIMS

KW - Semiconductor

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UR - http://www.scopus.com/inward/citedby.url?scp=58849141392&partnerID=8YFLogxK

U2 - 10.1117/12.271154

DO - 10.1117/12.271154

M3 - Conference article

AN - SCOPUS:58849141392

SN - 0277-786X

VL - 2996

SP - 2

EP - 7

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Rare-Earth-Doped Devices

Y2 - 10 February 1997 through 10 February 1997

ER -

Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Abstract

Keywords

ASJC Scopus subject areas

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