Er-doped fluoride glass films by MOCVD for waveguide devices

Chia Yen Li; Vladimir Fuflyigin; Jing Zhao; Xuesheng Chen; Seppo Honkanen; Nasser Peyghambarian

doi:10.1117/12.271145

Er-doped fluoride glass films by MOCVD for waveguide devices

Chia Yen Li, Vladimir Fuflyigin, Jing Zhao, Xuesheng Chen, Seppo Honkanen, Nasser Peyghambarian

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on the growth of erbium doped ZrF₄-LaF₃- BaF₂ glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF₂ was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.

Original language	English (US)
Pages (from-to)	68-73
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2996
DOIs	https://doi.org/10.1117/12.271145
State	Published - 1997
Event	Rare-Earth-Doped Devices - San Jose, CA, United States Duration: Feb 10 1997 → Feb 10 1997

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.271145

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title = "Er-doped fluoride glass films by MOCVD for waveguide devices",

abstract = "We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.",

author = "Li, {Chia Yen} and Vladimir Fuflyigin and Jing Zhao and Xuesheng Chen and Seppo Honkanen and Nasser Peyghambarian",

year = "1997",

doi = "10.1117/12.271145",

language = "English (US)",

volume = "2996",

pages = "68--73",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Rare-Earth-Doped Devices ; Conference date: 10-02-1997 Through 10-02-1997",

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T1 - Er-doped fluoride glass films by MOCVD for waveguide devices

AU - Li, Chia Yen

AU - Fuflyigin, Vladimir

AU - Zhao, Jing

AU - Chen, Xuesheng

AU - Honkanen, Seppo

AU - Peyghambarian, Nasser

PY - 1997

Y1 - 1997

N2 - We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.

AB - We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.

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DO - 10.1117/12.271145

M3 - Conference article

AN - SCOPUS:58749100650

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VL - 2996

SP - 68

EP - 73

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Rare-Earth-Doped Devices

Y2 - 10 February 1997 through 10 February 1997

ER -

Er-doped fluoride glass films by MOCVD for waveguide devices

Abstract

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