Abstract
We report on the growth of erbium doped ZrF4-LaF3- BaF2 glass films by metalorganic chemical vapor deposition (MOCVD) for the construction of planar waveguide devices. Our process provides the growth of high quality, uniform in thickness, and continuous films on a wide variety of common substrates. A protective layer of MgF2 was deposited in-situ onto the Er-doped glass films under the same CVD deposition conditions. The luminescence of Er around 1.55 micrometers was observed in films on all the substrates used. The emission line shapes are the same as those observed from Er-doped fluorozirconate glass. MOCVD proved to be a feasible technology to grow rare-earth doped fluoride films for planar waveguide devices.
Original language | English (US) |
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Pages (from-to) | 68-73 |
Number of pages | 6 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 2996 |
DOIs | |
State | Published - 1997 |
Event | Rare-Earth-Doped Devices - San Jose, CA, United States Duration: Feb 10 1997 → Feb 10 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering