Er diffusion and Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

M. S. Bresler, B. Ya Ber, O. B. Gusev, E. K. Lindmark, J. P. Prineas, U. M. Gibbs, G. Khitrova, V. F. Masterov, I. N. Yassievich, B. P. Zakharchenya

Research output: Contribution to journalArticlepeer-review


It is shown that the introduction of erbium in GaAs/AlGaAs quantum well structures in the process of growth by MBE leads to efficient interdiffusion of Ga and Al and diffusion of Er due to impurity-enhanced formation of cation vacancies. A mechanism of cation vacancies formation is proposed based on local strain induced by introduction of erbium. We have demonstrated also that erbium interacts with aluminum in arsenides. This interaction can be responsible for the formation of Er-containing Al-enriched clusters.

Original languageEnglish (US)
Pages (from-to)1701-1706
Number of pages6
JournalMaterials Science Forum
Issue number9993
StatePublished - 1997


  • Erbium
  • GaAs/AlGaAs quantum structures
  • Interdiffusion

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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