Er diffusion and Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

M. S. Bresler; B. Ya Ber; O. B. Gusev; E. K. Lindmark; J. P. Prineas; U. M. Gibbs; G. Khitrova; V. F. Masterov; I. N. Yassievich; B. P. Zakharchenya

doi:10.4028/www.scientific.net/msf.258-263.1701

Er diffusion and Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

M. S. Bresler, B. Ya Ber, O. B. Gusev, E. K. Lindmark, J. P. Prineas, U. M. Gibbs, G. Khitrova, V. F. Masterov, I. N. Yassievich, B. P. Zakharchenya

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

Abstract

It is shown that the introduction of erbium in GaAs/AlGaAs quantum well structures in the process of growth by MBE leads to efficient interdiffusion of Ga and Al and diffusion of Er due to impurity-enhanced formation of cation vacancies. A mechanism of cation vacancies formation is proposed based on local strain induced by introduction of erbium. We have demonstrated also that erbium interacts with aluminum in arsenides. This interaction can be responsible for the formation of Er-containing Al-enriched clusters.

Original language	English (US)
Pages (from-to)	1701-1706
Number of pages	6
Journal	Materials Science Forum
Volume	258-263
Issue number	9993
DOIs	https://doi.org/10.4028/www.scientific.net/msf.258-263.1701
State	Published - 1997

Keywords

Erbium
GaAs/AlGaAs quantum structures
Interdiffusion

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/msf.258-263.1701

Cite this

@article{37e1da6f18554fa08b1ea8573401ab53,

title = "Er diffusion and Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures",

abstract = "It is shown that the introduction of erbium in GaAs/AlGaAs quantum well structures in the process of growth by MBE leads to efficient interdiffusion of Ga and Al and diffusion of Er due to impurity-enhanced formation of cation vacancies. A mechanism of cation vacancies formation is proposed based on local strain induced by introduction of erbium. We have demonstrated also that erbium interacts with aluminum in arsenides. This interaction can be responsible for the formation of Er-containing Al-enriched clusters.",

keywords = "Erbium, GaAs/AlGaAs quantum structures, Interdiffusion",

author = "Bresler, {M. S.} and Ber, {B. Ya} and Gusev, {O. B.} and Lindmark, {E. K.} and Prineas, {J. P.} and Gibbs, {U. M.} and G. Khitrova and Masterov, {V. F.} and Yassievich, {I. N.} and Zakharchenya, {B. P.}",

year = "1997",

doi = "10.4028/www.scientific.net/msf.258-263.1701",

language = "English (US)",

volume = "258-263",

pages = "1701--1706",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "9993",

}

TY - JOUR

T1 - Er diffusion and Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

AU - Bresler, M. S.

AU - Ber, B. Ya

AU - Gusev, O. B.

AU - Lindmark, E. K.

AU - Prineas, J. P.

AU - Gibbs, U. M.

AU - Khitrova, G.

AU - Masterov, V. F.

AU - Yassievich, I. N.

AU - Zakharchenya, B. P.

PY - 1997

Y1 - 1997

N2 - It is shown that the introduction of erbium in GaAs/AlGaAs quantum well structures in the process of growth by MBE leads to efficient interdiffusion of Ga and Al and diffusion of Er due to impurity-enhanced formation of cation vacancies. A mechanism of cation vacancies formation is proposed based on local strain induced by introduction of erbium. We have demonstrated also that erbium interacts with aluminum in arsenides. This interaction can be responsible for the formation of Er-containing Al-enriched clusters.

AB - It is shown that the introduction of erbium in GaAs/AlGaAs quantum well structures in the process of growth by MBE leads to efficient interdiffusion of Ga and Al and diffusion of Er due to impurity-enhanced formation of cation vacancies. A mechanism of cation vacancies formation is proposed based on local strain induced by introduction of erbium. We have demonstrated also that erbium interacts with aluminum in arsenides. This interaction can be responsible for the formation of Er-containing Al-enriched clusters.

KW - Erbium

KW - GaAs/AlGaAs quantum structures

KW - Interdiffusion

UR - http://www.scopus.com/inward/record.url?scp=0031357842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031357842&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.258-263.1701

DO - 10.4028/www.scientific.net/msf.258-263.1701

M3 - Article

AN - SCOPUS:0031357842

SN - 0255-5476

VL - 258-263

SP - 1701

EP - 1706

JO - Materials Science Forum

JF - Materials Science Forum

IS - 9993

ER -

Er diffusion and Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this