TY - JOUR
T1 - Enhancement of Thermally Injected Spin Current through an Antiferromagnetic Insulator
AU - Lin, Weiwei
AU - Chen, Kai
AU - Zhang, Shufeng
AU - Chien, C. L.
N1 - Funding Information:
This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Science, under Award Grant No.? DE-SC0009390. W. L. was supported in part by C-SPIN, one of six centers of STARnet, a SRC program sponsored by MARCO and DARPA. K. C. and S. Z. were supported by National Science Foundation under Grant No.? ECCS-1404542. W. L. thanks Ssu-Yen Huang from National Taiwan University for fruitful discussions.
Publisher Copyright:
© 2016 American Physical Society.
PY - 2016/5/5
Y1 - 2016/5/5
N2 - We report a large enhancement of thermally injected spin current in normal metal (NM)/antiferromagnet (AF)/yttrium iron garnet (YIG), where a thin AF insulating layer of NiO or CoO can enhance the spin current from YIG to a NM by up to a factor of 10. The spin current enhancement in NM/AF/YIG, with a pronounced maximum near the Néel temperature of the thin AF layer, has been found to scale linearly with the spin-mixing conductance at the NM/YIG interface for NM=3d, 4d, and 5d metals. Calculations of spin current enhancement and spin mixing conductance are qualitatively consistent with the experimental results.
AB - We report a large enhancement of thermally injected spin current in normal metal (NM)/antiferromagnet (AF)/yttrium iron garnet (YIG), where a thin AF insulating layer of NiO or CoO can enhance the spin current from YIG to a NM by up to a factor of 10. The spin current enhancement in NM/AF/YIG, with a pronounced maximum near the Néel temperature of the thin AF layer, has been found to scale linearly with the spin-mixing conductance at the NM/YIG interface for NM=3d, 4d, and 5d metals. Calculations of spin current enhancement and spin mixing conductance are qualitatively consistent with the experimental results.
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U2 - 10.1103/PhysRevLett.116.186601
DO - 10.1103/PhysRevLett.116.186601
M3 - Article
AN - SCOPUS:84966350028
VL - 116
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 18
M1 - 186601
ER -