Abstract
We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 μm (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors.
Original language | English (US) |
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Pages (from-to) | 5631-5633 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 23 |
DOIs | |
State | Published - Dec 6 2004 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)