Enhanced photoluminescence from GaAsSb quantum wells

Alan R. Kost; Xiaolan Sun; Nasser Peyghambarian; Nayer Eradat; Espen Selvig; Bjorn Ove Fimland; David H. Chow

doi:10.1063/1.1759381

Enhanced photoluminescence from GaAsSb quantum wells

Alan R. Kost, Xiaolan Sun, Nasser Peyghambarian, Nayer Eradat, Espen Selvig, Bjorn Ove Fimland, David H. Chow

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 μm (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors.

Original language	English (US)
Pages (from-to)	5631-5633
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	23
DOIs	https://doi.org/10.1063/1.1759381
State	Published - Dec 6 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1759381

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title = "Enhanced photoluminescence from GaAsSb quantum wells",

abstract = "We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 μm (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors.",

author = "Kost, {Alan R.} and Xiaolan Sun and Nasser Peyghambarian and Nayer Eradat and Espen Selvig and Fimland, {Bjorn Ove} and Chow, {David H.}",

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T1 - Enhanced photoluminescence from GaAsSb quantum wells

AU - Kost, Alan R.

AU - Sun, Xiaolan

AU - Peyghambarian, Nasser

AU - Eradat, Nayer

AU - Selvig, Espen

AU - Fimland, Bjorn Ove

AU - Chow, David H.

PY - 2004/12/6

Y1 - 2004/12/6

N2 - We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 μm (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors.

AB - We describe promising semiconductor materials for optoelectronics. GaAsSb/AlSb quantum wells on GaSb substrates show photoluminescence near 1.54 μm (0.8 eV) that increases with increasing arsenic fraction. The materials can be monolithically integrated with AlGaSb/AlSb or AlGaAsSb/AlAsSb Bragg mirrors.

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M3 - Article

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JF - Applied Physics Letters

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Enhanced photoluminescence from GaAsSb quantum wells

Abstract

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