Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Pravin Khanal; Bowei Zhou; Magda Andrade; Christopher Mastrangelo; Ali Habiboglu; Arthur Enriquez; Daulton Fox; Kennedy Warrilow; Wei Gang Wang

doi:10.1016/j.jmmm.2022.169914

Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl₂O₄ barrier

Pravin Khanal, Bowei Zhou, Magda Andrade, Christopher Mastrangelo, Ali Habiboglu, Arthur Enriquez, Daulton Fox, Kennedy Warrilow, Wei Gang Wang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Perpendicular magnetic tunnel junction with MgAl₂O₄ barrier is investigated. It is found that reactive RF sputtering with O₂ is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl₂O₄-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m² is obtained for the samples annealed at 400 °C. An enhanced magnetoresistance of 60% has also been achieved. The V_half, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1 V, which is substantially higher than that of MgO-based junctions.

Original language	English (US)
Article number	169914
Journal	Journal of Magnetism and Magnetic Materials
Volume	563
DOIs	https://doi.org/10.1016/j.jmmm.2022.169914
State	Published - Dec 1 2022
Externally published	Yes

Keywords

MgAlO-barrier
Perpendicular magnetic anisotropy
Perpendicular magnetic tunneling junction
Reactive sputtering
Tunneling magnetoresistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2022.169914

Cite this

@article{b391298dbd54474aa4535e07b6b503d1,

title = "Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier",

abstract = "Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400 °C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1 V, which is substantially higher than that of MgO-based junctions.",

keywords = "MgAlO-barrier, Perpendicular magnetic anisotropy, Perpendicular magnetic tunneling junction, Reactive sputtering, Tunneling magnetoresistance",

author = "Pravin Khanal and Bowei Zhou and Magda Andrade and Christopher Mastrangelo and Ali Habiboglu and Arthur Enriquez and Daulton Fox and Kennedy Warrilow and Wang, {Wei Gang}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = dec,

day = "1",

doi = "10.1016/j.jmmm.2022.169914",

language = "English (US)",

volume = "563",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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TY - JOUR

T1 - Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

AU - Khanal, Pravin

AU - Zhou, Bowei

AU - Andrade, Magda

AU - Mastrangelo, Christopher

AU - Habiboglu, Ali

AU - Enriquez, Arthur

AU - Fox, Daulton

AU - Warrilow, Kennedy

AU - Wang, Wei Gang

PY - 2022/12/1

Y1 - 2022/12/1

N2 - Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400 °C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1 V, which is substantially higher than that of MgO-based junctions.

AB - Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400 °C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1 V, which is substantially higher than that of MgO-based junctions.

KW - MgAlO-barrier

KW - Perpendicular magnetic anisotropy

KW - Perpendicular magnetic tunneling junction

KW - Reactive sputtering

KW - Tunneling magnetoresistance

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