Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

Pravin Khanal, Bowei Zhou, Magda Andrade, Christopher Mastrangelo, Ali Habiboglu, Arthur Enriquez, Daulton Fox, Kennedy Warrilow, Wei Gang Wang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400 °C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1 V, which is substantially higher than that of MgO-based junctions.

Original languageEnglish (US)
Article number169914
JournalJournal of Magnetism and Magnetic Materials
StatePublished - Dec 1 2022


  • MgAlO-barrier
  • Perpendicular magnetic anisotropy
  • Perpendicular magnetic tunneling junction
  • Reactive sputtering
  • Tunneling magnetoresistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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