Abstract
Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo5+ relative to Mo6+. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.
Original language | English (US) |
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Pages (from-to) | 24981-24986 |
Number of pages | 6 |
Journal | ACS Applied Materials and Interfaces |
Volume | 10 |
Issue number | 30 |
DOIs | |
State | Published - Aug 1 2018 |
Keywords
- interfaces
- metal oxide
- nanocrystals
- optoelectronic devices
- photoemission spectroscopy
- solar cells
ASJC Scopus subject areas
- General Materials Science