Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers

Martin R. Hofmann; Nils Gerhardt; Anke M. Wagner; C. Ellmers; Falko Höhnsdorf; Jörg Koch; Wolfgang Stolz; Stephan W. Koch; Wolfgang W. Rühle; J. Hader; Jerome V. Moloney; E. P. O'Reilly; Bernd Borchert; A. Y. Egorov; Henning Riechert; Hans Christian Schneider; Weng W. Chow

doi:10.1109/3.980275

Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers

Martin R. Hofmann, Nils Gerhardt, Anke M. Wagner, C. Ellmers, Falko Höhnsdorf, Jörg Koch, Wolfgang Stolz, Stephan W. Koch, Wolfgang W. Rühle, J. Hader, Jerome V. Moloney, E. P. O'Reilly, Bernd Borchert, A. Y. Egorov, Henning Riechert, Hans Christian Schneider, Weng W. Chow

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48 Scopus citations

Abstract

The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9 · 10^-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP - structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment.

Original language	English (US)
Pages (from-to)	213-221
Number of pages	9
Journal	IEEE Journal of Quantum Electronics
Volume	38
Issue number	2
DOIs	https://doi.org/10.1109/3.980275
State	Published - Feb 2002

Keywords

Dynamics
Gain measurement
Modeling
Nitrogen compounds
Optical fiber communication
Optical spectroscopy
Quantum-well lasers
Semiconductor heterojunctions

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.980275

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Hofmann, M. R., Gerhardt, N., Wagner, A. M., Ellmers, C., Höhnsdorf, F., Koch, J., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., O'Reilly, E. P., Borchert, B., Egorov, A. Y., Riechert, H., Schneider, H. C., & Chow, W. W. (2002). Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers. IEEE Journal of Quantum Electronics, 38(2), 213-221. https://doi.org/10.1109/3.980275

Hofmann, MR, Gerhardt, N, Wagner, AM, Ellmers, C, Höhnsdorf, F, Koch, J, Stolz, W, Koch, SW, Rühle, WW, Hader, J , Moloney, JV, O'Reilly, EP, Borchert, B, Egorov, AY, Riechert, H, Schneider, HC & Chow, WW 2002, 'Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers', IEEE Journal of Quantum Electronics, vol. 38, no. 2, pp. 213-221. https://doi.org/10.1109/3.980275

@article{e41b32de6428497ba8aecad30e4ee94f,

title = "Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers",

abstract = "The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9 · 10-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP - structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment.",

keywords = "Dynamics, Gain measurement, Modeling, Nitrogen compounds, Optical fiber communication, Optical spectroscopy, Quantum-well lasers, Semiconductor heterojunctions",

author = "Hofmann, {Martin R.} and Nils Gerhardt and Wagner, {Anke M.} and C. Ellmers and Falko H{\"o}hnsdorf and J{\"o}rg Koch and Wolfgang Stolz and Koch, {Stephan W.} and R{\"u}hle, {Wolfgang W.} and J. Hader and Moloney, {Jerome V.} and O'Reilly, {E. P.} and Bernd Borchert and Egorov, {A. Y.} and Henning Riechert and Schneider, {Hans Christian} and Chow, {Weng W.}",

note = "Funding Information: Manuscript received August 25, 2001; revised November 5, 2001. This work was supported in part by the Deutsche Forschungsgemeinschaft (DFG), by the Bundesministerium f{\"u}r Bildung, Wissenschaft, Forschung und Technologie (BMBF), by the Max-Planck program of the Humboldt and Max-Planck Societies, by the U.S. Air Force Office of Scientific Research under Contract AFOSR-F49620–97-1–0002 and AFOSR-F49620–98-1–0227, by the Enge-neering and Physical Sciences Research Council (U.K.), and by the United States Department of Energy under Contract DE-AC04–94AL85000.",

year = "2002",

month = feb,

doi = "10.1109/3.980275",

language = "English (US)",

volume = "38",

pages = "213--221",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

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TY - JOUR

T1 - Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers

AU - Hofmann, Martin R.

AU - Gerhardt, Nils

AU - Wagner, Anke M.

AU - Ellmers, C.

AU - Höhnsdorf, Falko

AU - Koch, Jörg

AU - Stolz, Wolfgang

AU - Koch, Stephan W.

AU - Rühle, Wolfgang W.

AU - Hader, J.

AU - Moloney, Jerome V.

AU - O'Reilly, E. P.

AU - Borchert, Bernd

AU - Egorov, A. Y.

AU - Riechert, Henning

AU - Schneider, Hans Christian

AU - Chow, Weng W.

N1 - Funding Information: Manuscript received August 25, 2001; revised November 5, 2001. This work was supported in part by the Deutsche Forschungsgemeinschaft (DFG), by the Bundesministerium für Bildung, Wissenschaft, Forschung und Technologie (BMBF), by the Max-Planck program of the Humboldt and Max-Planck Societies, by the U.S. Air Force Office of Scientific Research under Contract AFOSR-F49620–97-1–0002 and AFOSR-F49620–98-1–0227, by the Enge-neering and Physical Sciences Research Council (U.K.), and by the United States Department of Energy under Contract DE-AC04–94AL85000.

PY - 2002/2

Y1 - 2002/2

N2 - The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9 · 10-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP - structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment.

AB - The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9 · 10-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP - structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment.

KW - Dynamics

KW - Gain measurement

KW - Modeling

KW - Nitrogen compounds

KW - Optical fiber communication

KW - Optical spectroscopy

KW - Quantum-well lasers

KW - Semiconductor heterojunctions

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U2 - 10.1109/3.980275

DO - 10.1109/3.980275

M3 - Article

AN - SCOPUS:0036477680

SN - 0018-9197

VL - 38

SP - 213

EP - 221

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 2

ER -

Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers

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