Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers

Martin R. Hofmann, Nils Gerhardt, Anke M. Wagner, C. Ellmers, Falko Höhnsdorf, Jörg Koch, Wolfgang Stolz, Stephan W. Koch, Wolfgang W. Rühle, J. Hader, Jerome V. Moloney, E. P. O'Reilly, Bernd Borchert, A. Y. Egorov, Henning Riechert, Hans Christian Schneider, Weng W. Chow

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9 · 10-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP - structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment.

Original languageEnglish (US)
Pages (from-to)213-221
Number of pages9
JournalIEEE Journal of Quantum Electronics
Issue number2
StatePublished - Feb 2002


  • Dynamics
  • Gain measurement
  • Modeling
  • Nitrogen compounds
  • Optical fiber communication
  • Optical spectroscopy
  • Quantum-well lasers
  • Semiconductor heterojunctions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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