Electronically controlled microwave band gap filter structures

Michael J. Hill; Richard W. Ziolkowski; John Papapolymerou

doi:10.1063/1.1346629

Electronically controlled microwave band gap filter structures

Michael J. Hill, Richard W. Ziolkowski, John Papapolymerou

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.

Original language	English (US)
Pages (from-to)	1008-1010
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	7
DOIs	https://doi.org/10.1063/1.1346629
State	Published - Feb 12 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{072cb5242af2462c8e2c138e6925dfa2,

title = "Electronically controlled microwave band gap filter structures",

abstract = "Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.",

author = "Hill, {Michael J.} and Ziolkowski, {Richard W.} and John Papapolymerou",

year = "2001",

month = feb,

day = "12",

doi = "10.1063/1.1346629",

language = "English (US)",

volume = "78",

pages = "1008--1010",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Electronically controlled microwave band gap filter structures

AU - Hill, Michael J.

AU - Ziolkowski, Richard W.

AU - Papapolymerou, John

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.

AB - Microwave band gap structures (MBG) utilizing fixed defects have received much interest because of their ability to operate as narrow band filters. With the recent interest in reconfigurable wireless devices, the need for electronically controllable narrow band filters is on the rise. By altering the defects in an MBG crystal, the transmission properties of the crystal can be changed. Using this concept, two controllable defect structures have been studied. Microwave band gap crystals utilizing single and dual p-i-n diode defect structures have been simulated, fabricated, and tested. Through the control of the p-i-n diode bias current, the transmission effects caused by the crystal defects can be altered. Experiments demonstrating contrasts of more than 30 dB between the diode-on and diode-off states are presented along with the corresponding finite difference time domain simulation results.

UR - http://www.scopus.com/inward/record.url?scp=0005277633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005277633&partnerID=8YFLogxK

U2 - 10.1063/1.1346629

DO - 10.1063/1.1346629

M3 - Article

AN - SCOPUS:0005277633

SN - 0003-6951

VL - 78

SP - 1008

EP - 1010

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Electronically controlled microwave band gap filter structures

Abstract

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