Electron–Hole Plasma-Induced Dephasing in Transition Metal Dichalcogenides

Electron–hole plasma-induced dephasing and its influence on the excitonic absorption and the degenerate four-wave mixing spectra in monolayer transition metal dichalcogenides are investigated. A systematic microscopic theory is presented that combines density functional calculations for the linear material properties with a many-body equation of motion approach for the optical response. Numerical results are obtained for the example of an hBN-encapsulated layer of (Formula presented.). It is shown that the influence of the excitation-induced dephasing depends only weakly on the exact shape of the carrier distribution for small densities, whereas distribution details become more important with increasing density.