Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane

S. Penner; M. Fallahi; O. Nordman

doi:10.1016/S0167-9317(98)00088-4

Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane

S. Penner, M. Fallahi, O. Nordman

Optical Sciences

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Highly anisotropic ECR etching of sub-half-micron features in GaAs and AlGaAs using a Cl₂-CH₄ mixture is reported. Etch depths greater than 1 μm with aspect ratios nearing 5:1 were achieved while maintaining vertical sidewalls, sharp transitions and smooth etched surface.

Original language	English (US)
Pages (from-to)	383-386
Number of pages	4
Journal	Microelectronic Engineering
Volume	41-42
DOIs	https://doi.org/10.1016/S0167-9317(98)00088-4
State	Published - 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(98)00088-4

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title = "Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane",

abstract = "Highly anisotropic ECR etching of sub-half-micron features in GaAs and AlGaAs using a Cl2-CH4 mixture is reported. Etch depths greater than 1 μm with aspect ratios nearing 5:1 were achieved while maintaining vertical sidewalls, sharp transitions and smooth etched surface.",

author = "S. Penner and M. Fallahi and O. Nordman",

year = "1998",

doi = "10.1016/S0167-9317(98)00088-4",

language = "English (US)",

volume = "41-42",

pages = "383--386",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane

AU - Penner, S.

AU - Fallahi, M.

AU - Nordman, O.

PY - 1998

Y1 - 1998

N2 - Highly anisotropic ECR etching of sub-half-micron features in GaAs and AlGaAs using a Cl2-CH4 mixture is reported. Etch depths greater than 1 μm with aspect ratios nearing 5:1 were achieved while maintaining vertical sidewalls, sharp transitions and smooth etched surface.

AB - Highly anisotropic ECR etching of sub-half-micron features in GaAs and AlGaAs using a Cl2-CH4 mixture is reported. Etch depths greater than 1 μm with aspect ratios nearing 5:1 were achieved while maintaining vertical sidewalls, sharp transitions and smooth etched surface.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031700820&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(98)00088-4

DO - 10.1016/S0167-9317(98)00088-4

M3 - Article

AN - SCOPUS:0031700820

SN - 0167-9317

VL - 41-42

SP - 383

EP - 386

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Electron cyclotron resonance reactive ion etching of GaAs in chlorine-methane

Abstract

ASJC Scopus subject areas

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