Electrochemical mechanical removal of Ta films in dihydroxybenzene sulfonic acid solutions containing potassium iodate

R. Govindarajan; S. Siddiqui; M. Keswani; S. Raghavan; D. R.P. Singh; N. Chawla

doi:10.1149/1.3535269

Electrochemical mechanical removal of Ta films in dihydroxybenzene sulfonic acid solutions containing potassium iodate

R. Govindarajan, S. Siddiqui, M. Keswani, S. Raghavan, D. R.P. Singh, N. Chawla

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Removal of Ta films has been investigated in solutions containing 2,5 dihydroxy benzene sulfonic acid and potassium iodate (KIO₃) under conditions that exist during electrochemical mechanical polishing. Specifically, the films were abraded at low pressures (∼0.5 psi) on a polyurethane pad under galvanostatic conditions. Variables such as pH, KIO₃ concentration, and current density have been investigated to develop an optimized formulation. The nature of the oxide film formed on tantalum during the electrochemical abrasion process was investigated using x-ray photoelectron spectroscopy and nanoindentation techniques.

Original language	English (US)
Pages (from-to)	H156-H160
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1149/1.3535269
State	Published - 2011

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{601bc9de540d49b9bb9e89017a7c79c5,

title = "Electrochemical mechanical removal of Ta films in dihydroxybenzene sulfonic acid solutions containing potassium iodate",

abstract = "Removal of Ta films has been investigated in solutions containing 2,5 dihydroxy benzene sulfonic acid and potassium iodate (KIO3) under conditions that exist during electrochemical mechanical polishing. Specifically, the films were abraded at low pressures (∼0.5 psi) on a polyurethane pad under galvanostatic conditions. Variables such as pH, KIO3 concentration, and current density have been investigated to develop an optimized formulation. The nature of the oxide film formed on tantalum during the electrochemical abrasion process was investigated using x-ray photoelectron spectroscopy and nanoindentation techniques.",

author = "R. Govindarajan and S. Siddiqui and M. Keswani and S. Raghavan and Singh, {D. R.P.} and N. Chawla",

year = "2011",

doi = "10.1149/1.3535269",

language = "English (US)",

volume = "14",

pages = "H156--H160",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "4",

}

TY - JOUR

T1 - Electrochemical mechanical removal of Ta films in dihydroxybenzene sulfonic acid solutions containing potassium iodate

AU - Govindarajan, R.

AU - Siddiqui, S.

AU - Keswani, M.

AU - Raghavan, S.

AU - Singh, D. R.P.

AU - Chawla, N.

PY - 2011

Y1 - 2011

N2 - Removal of Ta films has been investigated in solutions containing 2,5 dihydroxy benzene sulfonic acid and potassium iodate (KIO3) under conditions that exist during electrochemical mechanical polishing. Specifically, the films were abraded at low pressures (∼0.5 psi) on a polyurethane pad under galvanostatic conditions. Variables such as pH, KIO3 concentration, and current density have been investigated to develop an optimized formulation. The nature of the oxide film formed on tantalum during the electrochemical abrasion process was investigated using x-ray photoelectron spectroscopy and nanoindentation techniques.

AB - Removal of Ta films has been investigated in solutions containing 2,5 dihydroxy benzene sulfonic acid and potassium iodate (KIO3) under conditions that exist during electrochemical mechanical polishing. Specifically, the films were abraded at low pressures (∼0.5 psi) on a polyurethane pad under galvanostatic conditions. Variables such as pH, KIO3 concentration, and current density have been investigated to develop an optimized formulation. The nature of the oxide film formed on tantalum during the electrochemical abrasion process was investigated using x-ray photoelectron spectroscopy and nanoindentation techniques.

UR - http://www.scopus.com/inward/record.url?scp=79951893500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951893500&partnerID=8YFLogxK

U2 - 10.1149/1.3535269

DO - 10.1149/1.3535269

M3 - Article

AN - SCOPUS:79951893500

SN - 1099-0062

VL - 14

SP - H156-H160

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Electrochemical mechanical removal of Ta films in dihydroxybenzene sulfonic acid solutions containing potassium iodate

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