Abstract
Electrochemical impedance spectroscopy was used to probe the mechanism of copper deposition on silicon from dilute hydrofluoric acid solutions. Reaction parameters such as polarization resistance and space-charge capacitance were evaluated using an equivalent circuit model. The electrochemical impedance technique was found to be sensitive to parts per billion levels of Cu2+ ion in dilute hydrofluoric acid solutions. An inductive loop appeared in Nyquist plots only when Cu2+ ions were present in hydrofluoric acid solutions. Both the polarization resistance and inductance decreased significantly as the solution Cu2+ concentration increased. Addition of a nonionic surfactant to hydrofluoric acid solutions significantly altered impedance characteristics of the silicon/solution interface. Total reflection X-ray fluorescence results showed that illumination enhanced deposition of copper on silicon nearly an order of magnitude.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 352-357 |
| Number of pages | 6 |
| Journal | Journal of the Electrochemical Society |
| Volume | 145 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry