Abstract
Electrochemical polarization experiments were performed on Si wafers in ammoniacal solutions maintained at a pH in the range of 9.5 to 11.5. Anodic polarization of silicon yielded curves which are typical for materials that undergo passivation. The values of open circuit potential and passivation potential for p-type Si wafers were more anodic than for the n-type Si wafers. Corrosion current density of p-type Si wafers of low resistivity was lower than that of wafers of high resistivity. Corrosion current densities correlated well with surface roughness induced in alkaline solutions. Addition of surfactant or H2O2 to alkaline solutions reduced critical current density for passivation and corrosion current density.
Original language | English (US) |
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Pages (from-to) | 63-68 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 386 |
DOIs | |
State | Published - 1995 |
Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering