Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells

Mark F. Krol; Michael J. Hayduk; Richard P. Leavitt; John T. Pham; Sergey Y. Ten; Brian P. McGinnis; Galina Khitrova; Nasser Peyghambarian

doi:10.1117/12.212718

Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells

Mark F. Krol, Michael J. Hayduk, Richard P. Leavitt, John T. Pham, Sergey Y. Ten, Brian P. McGinnis, Galina Khitrova, Nasser Peyghambarian

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.

Original language	English (US)
Pages (from-to)	248-255
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2481
DOIs	https://doi.org/10.1117/12.212718
State	Published - 1995
Event	Photonic Device Engineering for Dual-Use Applications - Orlando, FL, United States Duration: Apr 17 1995 → Apr 17 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{16cd8969ca2b422194d359be3d7583ff,

title = "Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells",

abstract = "We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.",

author = "Krol, {Mark F.} and Hayduk, {Michael J.} and Leavitt, {Richard P.} and Pham, {John T.} and Ten, {Sergey Y.} and McGinnis, {Brian P.} and Galina Khitrova and Nasser Peyghambarian",

year = "1995",

doi = "10.1117/12.212718",

language = "English (US)",

volume = "2481",

pages = "248--255",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Photonic Device Engineering for Dual-Use Applications ; Conference date: 17-04-1995 Through 17-04-1995",

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TY - JOUR

T1 - Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells

AU - Krol, Mark F.

AU - Hayduk, Michael J.

AU - Leavitt, Richard P.

AU - Pham, John T.

AU - Ten, Sergey Y.

AU - McGinnis, Brian P.

AU - Khitrova, Galina

AU - Peyghambarian, Nasser

PY - 1995

Y1 - 1995

N2 - We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.

AB - We report enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As Asymmetric Double Quantum Wells (ADQWs) by the use of real space electron transfer. The electron concentration in both the wide and narrow wells is investigated by field dependent absorption and photoluminescence spectroscopy. Additionally, a study of carrier dynamics in these ADQW structures indicates that electrons tunnel between the coupled wells on picosecond time-scales.

UR - http://www.scopus.com/inward/record.url?scp=58149397648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149397648&partnerID=8YFLogxK

U2 - 10.1117/12.212718

DO - 10.1117/12.212718

M3 - Conference article

AN - SCOPUS:58149397648

SN - 0277-786X

VL - 2481

SP - 248

EP - 255

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photonic Device Engineering for Dual-Use Applications

Y2 - 17 April 1995 through 17 April 1995

ER -

Electroabsorption and carrier dynamics in (Ga,In)As/(Al,In)As asymmetric double quantum wells

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