Electrical transport in corrugated multilayered structures

Recently corrugated multilayered structures of Cu/Co/Cu/NiFe have been grown on silicon substrates which have (111) faceted grooves etched on their surface. These structures can be probed by conventional means with current at an angle to the plane of layers (CAP) as well as for currents in the plane. The CAP magnetoresistance (MR) has been found to be up to 50% greater than that for currents in the plane of the layers (CIP). We have derived the relation between the resistivities for CIP, CAP, and CPP (currents perpendicular to the plane of layers), in terms of the angle between the current and planes of the layers. From the measurement of the CIP and CAP-MRs we predict the CPP-MR for these structures.