Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm

C. Fuchs; C. Berger; C. Möller; M. Weseloh; S. Reinhard; J. Hader; J. V. Moloney; S. W. Koch; W. Stolz

doi:10.1049/el.2016.2851

Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm

C. Fuchs, C. Berger, C. Möller, M. Weseloh, S. Reinhard, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz

Research output: Contribution to journal › Article › peer-review

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Abstract

Highly efficient interface-dominated electrical injection lasers in the near-infrared regime based on the type-II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'-quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad-area laser studies. A characteristic blue shift of 93 meV/(kA/cm²) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm², high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm^-1 are observed at a wavelength of 1164 nm for a cavity length of 930 μm. For a cavity length of 2070 μm, the threshold current density is reduced to 0.1 kA/cm². No indication for type-I related transitions for current densities up to 4.6 kA/cm² is observed.

Original language	English (US)
Pages (from-to)	1875-1877
Number of pages	3
Journal	Electronics Letters
Volume	52
Issue number	22
DOIs	https://doi.org/10.1049/el.2016.2851
State	Published - Oct 27 2016

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2016.2851

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title = "Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm",

abstract = "Highly efficient interface-dominated electrical injection lasers in the near-infrared regime based on the type-II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'-quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad-area laser studies. A characteristic blue shift of 93 meV/(kA/cm2) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm2, high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm-1 are observed at a wavelength of 1164 nm for a cavity length of 930 μm. For a cavity length of 2070 μm, the threshold current density is reduced to 0.1 kA/cm2. No indication for type-I related transitions for current densities up to 4.6 kA/cm2 is observed.",

author = "C. Fuchs and C. Berger and C. M{\"o}ller and M. Weseloh and S. Reinhard and J. Hader and Moloney, {J. V.} and Koch, {S. W.} and W. Stolz",

note = "Funding Information: The Marburg work was a project of Sonderforschungsbereich 1083 funded by Deutsche Forschungsgemeinschaft (DFG). The work at Nonlinear Control Strategies Inc. was supported by the Air Force Office of Scientific Research under the STTR Phase II, Grant # FA9550-16-C-0021. The work at the University of Arizona was supported by the U.S. Air Force Office of Scientific Research, Contract # FA9550-14-1-0062. Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2016.",

year = "2016",

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doi = "10.1049/el.2016.2851",

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T1 - Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm

AU - Fuchs, C.

AU - Berger, C.

AU - Möller, C.

AU - Weseloh, M.

AU - Reinhard, S.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

AU - Stolz, W.

N1 - Funding Information: The Marburg work was a project of Sonderforschungsbereich 1083 funded by Deutsche Forschungsgemeinschaft (DFG). The work at Nonlinear Control Strategies Inc. was supported by the Air Force Office of Scientific Research under the STTR Phase II, Grant # FA9550-16-C-0021. The work at the University of Arizona was supported by the U.S. Air Force Office of Scientific Research, Contract # FA9550-14-1-0062. Publisher Copyright: © The Institution of Engineering and Technology 2016.

PY - 2016/10/27

Y1 - 2016/10/27

N2 - Highly efficient interface-dominated electrical injection lasers in the near-infrared regime based on the type-II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'-quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad-area laser studies. A characteristic blue shift of 93 meV/(kA/cm2) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm2, high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm-1 are observed at a wavelength of 1164 nm for a cavity length of 930 μm. For a cavity length of 2070 μm, the threshold current density is reduced to 0.1 kA/cm2. No indication for type-I related transitions for current densities up to 4.6 kA/cm2 is observed.

AB - Highly efficient interface-dominated electrical injection lasers in the near-infrared regime based on the type-II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'-quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad-area laser studies. A characteristic blue shift of 93 meV/(kA/cm2) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm2, high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm-1 are observed at a wavelength of 1164 nm for a cavity length of 930 μm. For a cavity length of 2070 μm, the threshold current density is reduced to 0.1 kA/cm2. No indication for type-I related transitions for current densities up to 4.6 kA/cm2 is observed.

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Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm

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