Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm

C. Fuchs, C. Berger, C. Möller, M. Weseloh, S. Reinhard, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz

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14 Scopus citations


Highly efficient interface-dominated electrical injection lasers in the near-infrared regime based on the type-II band alignment in (GaIn)As/Ga(AsSb)/(GaIn)As single 'W'-quantum wells are realised. The structure is designed by applying a fully microscopic theory, grown by metal organic vapour phase epitaxy, and characterised using electroluminescence measurements and broad-area laser studies. A characteristic blue shift of 93 meV/(kA/cm2) with increasing charge carrier density is observed and compared with theoretical investigations. Low threshold current densities of 0.4 kA/cm2, high differential efficiencies of 66%, optical output powers of 1.4 W per facet, and internal losses of only 1.9 cm-1 are observed at a wavelength of 1164 nm for a cavity length of 930 μm. For a cavity length of 2070 μm, the threshold current density is reduced to 0.1 kA/cm2. No indication for type-I related transitions for current densities up to 4.6 kA/cm2 is observed.

Original languageEnglish (US)
Pages (from-to)1875-1877
Number of pages3
JournalElectronics Letters
Issue number22
StatePublished - Oct 27 2016

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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