ELECTRIC-FIELD CONTROL of GIANT MAGNETORESISTANCE in SPIN-VALVES

Syed Rizwan; H. F. Liu; X. F. Han; Sen Zhang; Y. G. Zhao; S. Zhang

doi:10.1142/S2010324712500063

ELECTRIC-FIELD CONTROL of GIANT MAGNETORESISTANCE in SPIN-VALVES

Syed Rizwan, H. F. Liu, X. F. Han, Sen Zhang, Y. G. Zhao, S. Zhang

Physics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

It has been known that magnetic properties of a ferromagnet grown on piezoelectric substrates can be altered by the electric field-induced strain. We consider spin-valve CoFe/Cu/CoFe/IrMn grown on (011)-cut piezoelectric Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (PMN-PT) substrate and investigate the effect of the electric field on the giant magnetoresistance (GMR) of the spin valve. We found that the electric field induced strain on PMN-PT substrate enhances the coercivity of the magnetic layers. The transport measurement shows that the GMR ratio of the spin valve could be altered as much as 50% for an electric field of -8 kV/cm. The change of GMR is attributed to the reduced maximum degree of the antiparallel alignment between the magnetization directions of the free and pinned layers. The present studies establish a prototype electrically tunable magnetic memory device such that the electric field can reversibly tune spin valve magnetoresistance without deteriorating electric and magnetic properties.

Original language	English (US)
Article number	1250006
Journal	SPIN
Volume	2
Issue number	1
DOIs	https://doi.org/10.1142/S2010324712500063
State	Published - Mar 1 2012

Keywords

Converse piezoelectric effect
giant magnetoresistance
spin-valve
superconducting quantum interference device

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1142/S2010324712500063

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@article{841a87238af945a094c1a67a791b010f,

title = "ELECTRIC-FIELD CONTROL of GIANT MAGNETORESISTANCE in SPIN-VALVES",

abstract = "It has been known that magnetic properties of a ferromagnet grown on piezoelectric substrates can be altered by the electric field-induced strain. We consider spin-valve CoFe/Cu/CoFe/IrMn grown on (011)-cut piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) substrate and investigate the effect of the electric field on the giant magnetoresistance (GMR) of the spin valve. We found that the electric field induced strain on PMN-PT substrate enhances the coercivity of the magnetic layers. The transport measurement shows that the GMR ratio of the spin valve could be altered as much as 50% for an electric field of -8 kV/cm. The change of GMR is attributed to the reduced maximum degree of the antiparallel alignment between the magnetization directions of the free and pinned layers. The present studies establish a prototype electrically tunable magnetic memory device such that the electric field can reversibly tune spin valve magnetoresistance without deteriorating electric and magnetic properties.",

keywords = "Converse piezoelectric effect, giant magnetoresistance, spin-valve, superconducting quantum interference device",

author = "Syed Rizwan and Liu, {H. F.} and Han, {X. F.} and Sen Zhang and Zhao, {Y. G.} and S. Zhang",

note = "Funding Information: The project was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, No. 2010CB934400] and National Natural Science Foundation of China [NSFC, Grant No. 10934099, 10874225 and 51021061], and the partial support of K. C. Wong Education Foundation, Hong Kong, and US-NSF (S.Z.). Syed also thanks Higher Funding Information: The project was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, No. 2010CB934400] and National Natural Science Foundation of China [NSFC, Grant No. 10934099, 10874225 and 51021061], and the partial support of K. C. Wong Education Foundation, Hong Kong, and US-NSF (S.Z.). Syed also thanks Higher Education Commission (HEC) of Pakistan for partial financial support. Publisher Copyright: {\textcopyright} 2012 World Scientific Publishing Company.",

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doi = "10.1142/S2010324712500063",

language = "English (US)",

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T1 - ELECTRIC-FIELD CONTROL of GIANT MAGNETORESISTANCE in SPIN-VALVES

AU - Rizwan, Syed

AU - Liu, H. F.

AU - Han, X. F.

AU - Zhang, Sen

AU - Zhao, Y. G.

AU - Zhang, S.

N1 - Funding Information: The project was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, No. 2010CB934400] and National Natural Science Foundation of China [NSFC, Grant No. 10934099, 10874225 and 51021061], and the partial support of K. C. Wong Education Foundation, Hong Kong, and US-NSF (S.Z.). Syed also thanks Higher Funding Information: The project was supported by the State Key Project of Fundamental Research of Ministry of Science and Technology [MOST, No. 2010CB934400] and National Natural Science Foundation of China [NSFC, Grant No. 10934099, 10874225 and 51021061], and the partial support of K. C. Wong Education Foundation, Hong Kong, and US-NSF (S.Z.). Syed also thanks Higher Education Commission (HEC) of Pakistan for partial financial support. Publisher Copyright: © 2012 World Scientific Publishing Company.

PY - 2012/3/1

Y1 - 2012/3/1

N2 - It has been known that magnetic properties of a ferromagnet grown on piezoelectric substrates can be altered by the electric field-induced strain. We consider spin-valve CoFe/Cu/CoFe/IrMn grown on (011)-cut piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) substrate and investigate the effect of the electric field on the giant magnetoresistance (GMR) of the spin valve. We found that the electric field induced strain on PMN-PT substrate enhances the coercivity of the magnetic layers. The transport measurement shows that the GMR ratio of the spin valve could be altered as much as 50% for an electric field of -8 kV/cm. The change of GMR is attributed to the reduced maximum degree of the antiparallel alignment between the magnetization directions of the free and pinned layers. The present studies establish a prototype electrically tunable magnetic memory device such that the electric field can reversibly tune spin valve magnetoresistance without deteriorating electric and magnetic properties.

AB - It has been known that magnetic properties of a ferromagnet grown on piezoelectric substrates can be altered by the electric field-induced strain. We consider spin-valve CoFe/Cu/CoFe/IrMn grown on (011)-cut piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) substrate and investigate the effect of the electric field on the giant magnetoresistance (GMR) of the spin valve. We found that the electric field induced strain on PMN-PT substrate enhances the coercivity of the magnetic layers. The transport measurement shows that the GMR ratio of the spin valve could be altered as much as 50% for an electric field of -8 kV/cm. The change of GMR is attributed to the reduced maximum degree of the antiparallel alignment between the magnetization directions of the free and pinned layers. The present studies establish a prototype electrically tunable magnetic memory device such that the electric field can reversibly tune spin valve magnetoresistance without deteriorating electric and magnetic properties.

KW - Converse piezoelectric effect

KW - giant magnetoresistance

KW - spin-valve

KW - superconducting quantum interference device

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ER -

ELECTRIC-FIELD CONTROL of GIANT MAGNETORESISTANCE in SPIN-VALVES

Abstract

Keywords

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