Electric-field-assisted switching in magnetic tunneljunctions

Wei Gang Wang; Mingen Li; Stephen Hageman; C. L. Chien

doi:10.1038/nmat3171

Electric-field-assisted switching in magnetic tunneljunctions

Wei Gang Wang, Mingen Li, Stephen Hageman, C. L. Chien

Research output: Contribution to journal › Article › peer-review

899 Scopus citations

Abstract

The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 10⁶ g10⁷ A cm^-2. It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.

Original language	English (US)
Pages (from-to)	64-68
Number of pages	5
Journal	Nature materials
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/nmat3171
State	Published - Jan 2012
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Electric-field-assisted switching in magnetic tunneljunctions",

abstract = "The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 106 g107 A cm-2. It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.",

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AU - Li, Mingen

AU - Hageman, Stephen

AU - Chien, C. L.

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AB - The advent of spin transfer torque effect accommodates site-specific switching of magnetic nanostructures by current alone without magnetic field. However, the critical current density required for usual spin torque switching remains stubbornly high around 106 g107 A cm-2. It would be fundamentally transformative if an electric field through a voltage could assist or accomplish the switching of ferromagnets. Here we report electric-field-assisted reversible switching in CoFeB/MgO/CoFeB magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy, where the coercivity, the magnetic configuration and the tunnelling magnetoresistance can be manipulated by voltage pulses associated with much smaller current densities. These results represent a crucial step towards ultralow energy switching in magnetic tunnel junctions, and open a new avenue for exploring other voltage-controlled spintronic devices.

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Electric-field-assisted switching in magnetic tunneljunctions

Abstract

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