Effects of mask roughness and condenser scattering in EUVL systems

N. A. Beaudry, T. D. Milster

Research output: Contribution to journalConference articlepeer-review

33 Scopus citations


The wavefront reflected from extreme ultraviolet lithography (EUVL) mirror and mask surfaces can contain a non-negligible amount of phase variation due to roughness of the mirror surfaces and variations in multilayer thin-film coatings. We examine the characteristics of image and pattern formation as a function of phase variations originating at the mask surface and at condenser mirrors. A theoretical development and a Monte-Carlo simulation are used to show relationships between statistics of the phase variations and the mask pattern, coherence factor, and numerical aperture of the projection camera. Results indicate that it is possible to produce nearly 1% line-edge roughness in a photoresist pattern from moderate values of phase variations.

Original languageEnglish (US)
Pages (from-to)653-662
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Issue numberII
StatePublished - 1999
EventProceedings of the 1999 Emerging Lithographic Technologies III - Santa Clara, CA, USA
Duration: Mar 15 1999Mar 17 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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