Effects of current on nanoscale ring-shaped magnetic tunnel junctions

Hong Xiang Wei; Jiexuan He; Zhen Chao Wen; Xiu Feng Han; Wen Shan Zhan; Shufeng Zhang

doi:10.1103/PhysRevB.77.134432

Effects of current on nanoscale ring-shaped magnetic tunnel junctions

Hong Xiang Wei, Jiexuan He, Zhen Chao Wen, Xiu Feng Han, Wen Shan Zhan, Shufeng Zhang

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of 6× 106 A/ cm2, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.

Original language	English (US)
Article number	134432
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	13
DOIs	https://doi.org/10.1103/PhysRevB.77.134432
State	Published - Apr 17 2008
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.77.134432

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abstract = "We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of 6× 106 A/ cm2, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.",

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AU - Wei, Hong Xiang

AU - He, Jiexuan

AU - Wen, Zhen Chao

AU - Han, Xiu Feng

AU - Zhan, Wen Shan

AU - Zhang, Shufeng

PY - 2008/4/17

Y1 - 2008/4/17

N2 - We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of 6× 106 A/ cm2, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.

AB - We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of 6× 106 A/ cm2, the magnetization of the two magnetic rings can be switched back and forth between parallel and antiparallel onion states. Theoretical analysis and micromagnetic simulation show that the dominant mechanism for the observed current-driven switching is the spin torque rather than the current-induced circular Oersted field.

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Effects of current on nanoscale ring-shaped magnetic tunnel junctions

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