Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films

G. Teowee; J. M. Boulton; E. A. Kneer; M. N. Orr; D. P. Birnie; D. R. Uhlmann; S. C. Lee; K. F. Galloway; R. D. Schrimpf

doi:10.1109/ISAF.1992.300601

Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films

G. Teowee, J. M. Boulton, E. A. Kneer, M. N. Orr, D. P. Birnie, D. R. Uhlmann, S. C. Lee, K. F. Galloway, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

A series of sol-gel-derived PZT (lead zirconate titanate) films with Zr:Ti ratios of 100:0, 94:6, 80:20, 65:35, 53:47, 35:65, 20:80, and 0:100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700 degrees C where they were all single-phase perovskite as determined by XRD (X-ray diffraction). Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130-mu m by 130-mu m electrode pads. The ferroelectric properties on these pads were measured along with the leakage characteristics. The dielectric and ferroelectric properties of the PZT films were found to be highly dependent on composition and processing conditions.

Original language	English (US)
Title of host publication	ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics
Editors	Michael Liu, Ahmad Safari, Angus Kingon, Gene Haertling
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	424-427
Number of pages	4
ISBN (Electronic)	0780304659, 9780780304659
DOIs	https://doi.org/10.1109/ISAF.1992.300601
State	Published - 1992
Externally published	Yes
Event	8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992 - Greenville, United States Duration: Aug 30 1992 → Sep 2 1992

Publication series

Name	ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992
Country/Territory	United States
City	Greenville
Period	8/30/92 → 9/2/92

ASJC Scopus subject areas

Ceramics and Composites
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.1992.300601

Cite this

Teowee, G., Boulton, J. M., Kneer, E. A., Orr, M. N., Birnie, D. P., Uhlmann, D. R., Lee, S. C., Galloway, K. F., & Schrimpf, R. D. (1992). Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films. In M. Liu, A. Safari, A. Kingon, & G. Haertling (Eds.), ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics (pp. 424-427). Article 300601 (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF.1992.300601

Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films. / Teowee, G.; Boulton, J. M.; Kneer, E. A. et al.
ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics. ed. / Michael Liu; Ahmad Safari; Angus Kingon; Gene Haertling. Institute of Electrical and Electronics Engineers Inc., 1992. p. 424-427 300601 (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Teowee, G, Boulton, JM, Kneer, EA, Orr, MN, Birnie, DP, Uhlmann, DR, Lee, SC, Galloway, KF & Schrimpf, RD 1992, Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films. in M Liu, A Safari, A Kingon & G Haertling (eds), ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics., 300601, ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics, Institute of Electrical and Electronics Engineers Inc., pp. 424-427, 8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992, Greenville, United States, 8/30/92. https://doi.org/10.1109/ISAF.1992.300601

Teowee G, Boulton JM, Kneer EA, Orr MN, Birnie DP, Uhlmann DR et al. Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films. In Liu M, Safari A, Kingon A, Haertling G, editors, ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics. Institute of Electrical and Electronics Engineers Inc. 1992. p. 424-427. 300601. (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics). doi: 10.1109/ISAF.1992.300601

Teowee, G. ; Boulton, J. M. ; Kneer, E. A. et al. / Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films. ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics. editor / Michael Liu ; Ahmad Safari ; Angus Kingon ; Gene Haertling. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 424-427 (ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics).

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title = "Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films",

abstract = "A series of sol-gel-derived PZT (lead zirconate titanate) films with Zr:Ti ratios of 100:0, 94:6, 80:20, 65:35, 53:47, 35:65, 20:80, and 0:100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700 degrees C where they were all single-phase perovskite as determined by XRD (X-ray diffraction). Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130-mu m by 130-mu m electrode pads. The ferroelectric properties on these pads were measured along with the leakage characteristics. The dielectric and ferroelectric properties of the PZT films were found to be highly dependent on composition and processing conditions.",

author = "G. Teowee and Boulton, {J. M.} and Kneer, {E. A.} and Orr, {M. N.} and Birnie, {D. P.} and Uhlmann, {D. R.} and Lee, {S. C.} and Galloway, {K. F.} and Schrimpf, {R. D.}",

note = "Funding Information: Financial support for the present work was provided by the Air Force Office of Scientific Research (GT. JMB, DRU) and by the Office of Naval Research (EAK, SLL, MNO. KFG, RDS and DPB). This support is gratefully acknowledged. Publisher Copyright: {\textcopyright} 1992 IEEE.; 8th IEEE International Symposium on Applications of Ferroelectrics, ISAF 1992 ; Conference date: 30-08-1992 Through 02-09-1992",

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doi = "10.1109/ISAF.1992.300601",

language = "English (US)",

series = "ISAF 1992 - Proceedings of the 8th IEEE International Symposium on Applications of Ferroelectrics",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "424--427",

editor = "Michael Liu and Ahmad Safari and Angus Kingon and Gene Haertling",

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AU - Orr, M. N.

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AU - Uhlmann, D. R.

AU - Lee, S. C.

AU - Galloway, K. F.

AU - Schrimpf, R. D.

N1 - Funding Information: Financial support for the present work was provided by the Air Force Office of Scientific Research (GT. JMB, DRU) and by the Office of Naval Research (EAK, SLL, MNO. KFG, RDS and DPB). This support is gratefully acknowledged. Publisher Copyright: © 1992 IEEE.

PY - 1992

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N2 - A series of sol-gel-derived PZT (lead zirconate titanate) films with Zr:Ti ratios of 100:0, 94:6, 80:20, 65:35, 53:47, 35:65, 20:80, and 0:100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700 degrees C where they were all single-phase perovskite as determined by XRD (X-ray diffraction). Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130-mu m by 130-mu m electrode pads. The ferroelectric properties on these pads were measured along with the leakage characteristics. The dielectric and ferroelectric properties of the PZT films were found to be highly dependent on composition and processing conditions.

AB - A series of sol-gel-derived PZT (lead zirconate titanate) films with Zr:Ti ratios of 100:0, 94:6, 80:20, 65:35, 53:47, 35:65, 20:80, and 0:100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700 degrees C where they were all single-phase perovskite as determined by XRD (X-ray diffraction). Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130-mu m by 130-mu m electrode pads. The ferroelectric properties on these pads were measured along with the leakage characteristics. The dielectric and ferroelectric properties of the PZT films were found to be highly dependent on composition and processing conditions.

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ER -

Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films

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