Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

Lubna R. Shah; Hao Zhu; W. G. Wang; Bakhtyar Ali; Tao Zhu; Xin Fan; Y. Q. Song; Q. Y. Wen; H. W. Zhang; S. Ismat Shah; John Q. Xiao

doi:10.1088/0022-3727/43/3/035002

Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

Lubna R. Shah, Hao Zhu, W. G. Wang, Bakhtyar Ali, Tao Zhu, Xin Fan, Y. Q. Song, Q. Y. Wen, H. W. Zhang, S. Ismat Shah, John Q. Xiao

Physics

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53 Scopus citations

Abstract

We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Znⁱ). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Znⁱ layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

Original language	English (US)
Article number	035002
Journal	Journal of Physics D: Applied Physics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1088/0022-3727/43/3/035002
State	Published - 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/43/3/035002

Cite this

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title = "Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO",

abstract = "We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.",

author = "Shah, {Lubna R.} and Hao Zhu and Wang, {W. G.} and Bakhtyar Ali and Tao Zhu and Xin Fan and Song, {Y. Q.} and Wen, {Q. Y.} and Zhang, {H. W.} and Shah, {S. Ismat} and Xiao, {John Q.}",

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doi = "10.1088/0022-3727/43/3/035002",

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T1 - Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

AU - Shah, Lubna R.

AU - Zhu, Hao

AU - Wang, W. G.

AU - Ali, Bakhtyar

AU - Zhu, Tao

AU - Fan, Xin

AU - Song, Y. Q.

AU - Wen, Q. Y.

AU - Zhang, H. W.

AU - Shah, S. Ismat

AU - Xiao, John Q.

PY - 2010

Y1 - 2010

N2 - We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

AB - We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zni layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

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JO - Journal of Physics D: Applied Physics

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Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

Abstract

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