Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper

Dinesh Padmanabhan Ramalekshmi Thanu; Srini Raghavan; Manish Keswani

doi:10.1109/TSM.2012.2190998

Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper

Dinesh Padmanabhan Ramalekshmi Thanu, Srini Raghavan, Manish Keswani

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF ₄/O ₂ plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H ₂O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

Original language	English (US)
Article number	6170592
Pages (from-to)	516-522
Number of pages	7
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/TSM.2012.2190998
State	Published - 2012
Externally published	Yes

Keywords

CF /O plasma
copper corrosion
deep eutectic solvents
post-etch residues
siloxane-based low-k

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2012.2190998

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Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper. / Thanu, Dinesh Padmanabhan Ramalekshmi; Raghavan, Srini; Keswani, Manish.
In: IEEE Transactions on Semiconductor Manufacturing, Vol. 25, No. 3, 6170592, 2012, p. 516-522.

Research output: Contribution to journal › Article › peer-review

@article{3717a8a65fc24d3db7dd3e2b137f1863,

title = "Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper",

abstract = "Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.",

keywords = "CF /O plasma, copper corrosion, deep eutectic solvents, post-etch residues, siloxane-based low-k",

author = "Thanu, {Dinesh Padmanabhan Ramalekshmi} and Srini Raghavan and Manish Keswani",

note = "Funding Information: Manuscript received November 23, 2011; revised February 3, 2012; accepted March 6, 2012. Date of publication March 15, 2012; date of current version July 31, 2012. This work was supported in part by the SRC/Sematech Engineering Research Center for Environmentally Benign Semiconductor Manufacturing at The University of Arizona, under Contract 2001-MC-425.",

year = "2012",

doi = "10.1109/TSM.2012.2190998",

language = "English (US)",

volume = "25",

pages = "516--522",

journal = "IEEE Transactions on Semiconductor Manufacturing",

issn = "0894-6507",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper

AU - Thanu, Dinesh Padmanabhan Ramalekshmi

AU - Raghavan, Srini

AU - Keswani, Manish

N1 - Funding Information: Manuscript received November 23, 2011; revised February 3, 2012; accepted March 6, 2012. Date of publication March 15, 2012; date of current version July 31, 2012. This work was supported in part by the SRC/Sematech Engineering Research Center for Environmentally Benign Semiconductor Manufacturing at The University of Arizona, under Contract 2001-MC-425.

PY - 2012

Y1 - 2012

N2 - Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

AB - Feasibility of dissolution of post-etch residues (PERs) formed on copper in formulations containing a mixture of urea (U)-choline chloride (CC) deep eutectic solvent (DES) and water (W) has been investigated. PER films were formed on copper surface by spin coating deep ultraviolet photoresist film, followed by CF 4/O 2 plasma etching. The residue removal process was characterized using X-ray photoelectron spectroscopy and scanning electron microscopy techniques. Effective removal of PER was obtained in water-DES solutions containing as high as 90% water in the temperature range of 20-40°C. Additionally, the etch rates of copper and siloxane-based low-k dielectric material in water-DES solutions were found to be lower than that in deaerated 250:1 [H 2O: hydrofluoric acid (HF) (49%) volume ratio] dilute HF solutions.

KW - CF /O plasma

KW - copper corrosion

KW - deep eutectic solvents

KW - post-etch residues

KW - siloxane-based low-k

UR - http://www.scopus.com/inward/record.url?scp=84864667494&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864667494&partnerID=8YFLogxK

U2 - 10.1109/TSM.2012.2190998

DO - 10.1109/TSM.2012.2190998

M3 - Article

AN - SCOPUS:84864667494

SN - 0894-6507

VL - 25

SP - 516

EP - 522

JO - IEEE Transactions on Semiconductor Manufacturing

JF - IEEE Transactions on Semiconductor Manufacturing

IS - 3

M1 - 6170592

ER -

Effect of water addition to choline chloride-urea deep eutectic solvent (DES) on the removal of post-etch resid ues formed on copper

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ASJC Scopus subject areas

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