Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor

Majid M. Mansoori; Farhang Shadman

Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor

Majid M. Mansoori
, Farhang Shadman

Research output: Contribution to journal › Conference article › peer-review

Abstract

The impurity dynamics inside an inter-wafer region of a Vertical Thermal Silicon Oxidation Reactor has been studied. The study focuses on the effects of wafer size on drydown cycles. While processing larger size wafers has certain economic advantages, much longer drydown cycles are required to achieve acceptable impurity levels and gas phase uniformity inside the inter-wafer spacing.

Original language	English (US)
Pages (from-to)	246-250
Number of pages	5
Journal	Institute of Environmental Sciences - Proceedings, Annual Technical Meeting
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 42nd Annual Technical Meeting of the Institute of Environmental Sciences - Orlando, FL, USA Duration: May 12 1996 → May 16 1996

ASJC Scopus subject areas

Environmental Engineering

Cite this

@article{394752af2c3b44ef86de93eb51cf79ea,

title = "Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor",

abstract = "The impurity dynamics inside an inter-wafer region of a Vertical Thermal Silicon Oxidation Reactor has been studied. The study focuses on the effects of wafer size on drydown cycles. While processing larger size wafers has certain economic advantages, much longer drydown cycles are required to achieve acceptable impurity levels and gas phase uniformity inside the inter-wafer spacing.",

author = "Mansoori, \{Majid M.\} and Farhang Shadman",

year = "1996",

language = "English (US)",

pages = "246--250",

journal = "Institute of Environmental Sciences - Proceedings, Annual Technical Meeting",

issn = "0073-9227",

note = "Proceedings of the 1996 42nd Annual Technical Meeting of the Institute of Environmental Sciences ; Conference date: 12-05-1996 Through 16-05-1996",

}

TY - JOUR

T1 - Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor

AU - Mansoori, Majid M.

AU - Shadman, Farhang

PY - 1996

Y1 - 1996

N2 - The impurity dynamics inside an inter-wafer region of a Vertical Thermal Silicon Oxidation Reactor has been studied. The study focuses on the effects of wafer size on drydown cycles. While processing larger size wafers has certain economic advantages, much longer drydown cycles are required to achieve acceptable impurity levels and gas phase uniformity inside the inter-wafer spacing.

AB - The impurity dynamics inside an inter-wafer region of a Vertical Thermal Silicon Oxidation Reactor has been studied. The study focuses on the effects of wafer size on drydown cycles. While processing larger size wafers has certain economic advantages, much longer drydown cycles are required to achieve acceptable impurity levels and gas phase uniformity inside the inter-wafer spacing.

UR - https://www.scopus.com/pages/publications/0030315435

UR - https://www.scopus.com/pages/publications/0030315435#tab=citedBy

M3 - Conference article

AN - SCOPUS:0030315435

SN - 0073-9227

SP - 246

EP - 250

JO - Institute of Environmental Sciences - Proceedings, Annual Technical Meeting

JF - Institute of Environmental Sciences - Proceedings, Annual Technical Meeting

T2 - Proceedings of the 1996 42nd Annual Technical Meeting of the Institute of Environmental Sciences

Y2 - 12 May 1996 through 16 May 1996

ER -

Effect of wafer size on inter-wafer spacing drydown in vertical thermal reactor

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this