@inproceedings{79fd8a085bf147389333a07687713983,
title = "Effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process",
abstract = "Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.",
keywords = "Brush, Citric acid, Cleaning process, Cleaning solutions, Down force, Frictional force, PVA, Post copper CMP, Rotational rate, Shear force, Slurry, Surfactant",
author = "Yasa Sampurno and Yun Zhuang and Xun Gu and Sian Theng and Takenao Nemoto and Ting Sun and Fransisca Sudargho and Akinobu Teramoto and Ara Philipossian and Tadahiro Ohmi",
year = "2009",
doi = "10.4028/www.scientific.net/SSP.145-146.363",
language = "English (US)",
isbn = "3908451647",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "363--366",
booktitle = "Ultra Clean Processing of Semiconductor Surfaces IX",
note = "9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 ; Conference date: 22-09-2008 Through 24-09-2008",
}