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Effect of retaining ring slot design on slurry film thickness during CMP

  • Xiaomin Wei
  • , Yasa Adi Sampurno
  • , Yun Zhuang
  • , Roy Dittler
  • , Anand Meled
  • , Jiang Cheng
  • , Christopher Wargo
  • , Ralph Stankowski
  • , Ara Philipossian

Research output: Contribution to journalArticlepeer-review

Abstract

This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with "standard" and "alternative" slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the "alternative" slot design generated, on average, 30% thicker slurry film compared with the ring with the "standard" slot design.

Original languageEnglish (US)
Pages (from-to)H119-H121
JournalElectrochemical and Solid-State Letters
Volume13
Issue number4
DOIs
StatePublished - 2010
Externally publishedYes

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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