Effect of retaining ring slot design on slurry film thickness during CMP

Xiaomin Wei; Yasa Adi Sampurno; Yun Zhuang; Roy Dittler; Anand Meled; Jiang Cheng; Christopher Wargo; Ralph Stankowski; Ara Philipossian

doi:10.1149/1.3294496

Effect of retaining ring slot design on slurry film thickness during CMP

Xiaomin Wei, Yasa Adi Sampurno, Yun Zhuang, Roy Dittler, Anand Meled, Jiang Cheng, Christopher Wargo, Ralph Stankowski, Ara Philipossian

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with "standard" and "alternative" slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the "alternative" slot design generated, on average, 30% thicker slurry film compared with the ring with the "standard" slot design.

Original language	English (US)
Pages (from-to)	H119-H121
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1149/1.3294496
State	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

Access to Document

10.1149/1.3294496

Cite this

@article{981b721342bb424a87694b61a59623f9,

title = "Effect of retaining ring slot design on slurry film thickness during CMP",

abstract = "This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with {"}standard{"} and {"}alternative{"} slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the {"}alternative{"} slot design generated, on average, 30% thicker slurry film compared with the ring with the {"}standard{"} slot design.",

author = "Xiaomin Wei and Sampurno, {Yasa Adi} and Yun Zhuang and Roy Dittler and Anand Meled and Jiang Cheng and Christopher Wargo and Ralph Stankowski and Ara Philipossian",

year = "2010",

doi = "10.1149/1.3294496",

language = "English (US)",

volume = "13",

pages = "H119--H121",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "4",

}

TY - JOUR

T1 - Effect of retaining ring slot design on slurry film thickness during CMP

AU - Wei, Xiaomin

AU - Sampurno, Yasa Adi

AU - Zhuang, Yun

AU - Dittler, Roy

AU - Meled, Anand

AU - Cheng, Jiang

AU - Wargo, Christopher

AU - Stankowski, Ralph

AU - Philipossian, Ara

PY - 2010

Y1 - 2010

N2 - This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with "standard" and "alternative" slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the "alternative" slot design generated, on average, 30% thicker slurry film compared with the ring with the "standard" slot design.

AB - This article studied the effect of retaining ring slot designs on the slurry film thickness within the pad-wafer interface during chemical mechanical planarization (CMP). Two retaining rings, with "standard" and "alternative" slot designs, were tested. Slurry film thickness within the pad-wafer interface was measured during polishing using dual emission UV-enhanced fluorescence. Results showed that slurry flow rate, pressure, and pad-wafer rotational rate had impacts on the slurry film thickness. Under the same polishing condition, the ring with the "alternative" slot design generated, on average, 30% thicker slurry film compared with the ring with the "standard" slot design.

UR - http://www.scopus.com/inward/record.url?scp=76749157218&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76749157218&partnerID=8YFLogxK

U2 - 10.1149/1.3294496

DO - 10.1149/1.3294496

M3 - Article

AN - SCOPUS:76749157218

SN - 1099-0062

VL - 13

SP - H119-H121

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Effect of retaining ring slot design on slurry film thickness during CMP

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this