Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code: EP34

G. Teowee; J. M. Boulton; C. D. Baertlein; R. K. Wade; D. R. Uhlmann

doi:10.1007/BF00486322

Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code: EP34

G. Teowee, J. M. Boulton, C. D. Baertlein, R. K. Wade, D. R. Uhlmann

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.

Original language	English (US)
Pages (from-to)	623-626
Number of pages	4
Journal	Journal of Sol-Gel Science and Technology
Volume	2
Issue number	1-3
DOIs	https://doi.org/10.1007/BF00486322
State	Published - Jan 1994

Keywords

ferroelectric
lead titanate
lead zirconate
thin films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Biomaterials
Condensed Matter Physics
Materials Chemistry

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title = "Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code: EP34",

abstract = "A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.",

keywords = "ferroelectric, lead titanate, lead zirconate, thin films",

author = "G. Teowee and Boulton, {J. M.} and Baertlein, {C. D.} and Wade, {R. K.} and Uhlmann, {D. R.}",

year = "1994",

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AU - Wade, R. K.

AU - Uhlmann, D. R.

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N2 - A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.

AB - A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.

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KW - lead titanate

KW - lead zirconate

KW - thin films

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Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films - Code: EP34

Abstract

Keywords

ASJC Scopus subject areas

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