Effect of polisher kinematics in reducing average and variance of shear force and increasing removal rate in copper CMP

Yasa Sampurno, Ara Philipossian, Sian Theng, Takenao Nemoto, Xun Gu, Yun Zhuang, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of polisher kinematics on average and variance of shear force and removal rate in copper CMP is investigated. A 'delamination triangle' consisting of average shear force, variance of shear force, and required polishing time is defined, and 'delta' is calculated based on the product of the above three components. In general, low values of 'delta' are preferred to minimize defects during polishing. In the first part of this study, 200-mm blanket copper wafers are polished at constant platen rotation of 25 RPM and polishing pressure of 1.5 PS1 with different wafer rotational rates and slurry flow rates. Results indicate that at the slurry flow rate of 400 ml/min, 'delta' is higher by 50 to 290 percent than at 200 ml/min, and increasing wafer rotational rate from 23 to 148 RPM reduces 'delta' by more than 90 percent and improves removal rate within-wafer-non-uniformity by 2X. In the second part of this study, polishing is performed at the optimal slurry flow rate of 200 ml/min and wafer rotational rate of 148 RPM with different polishing pressures and platen rotational rates. Results indicate that 'delta' is reduced significantly at higher ratio of wafer to platen rotational rates.

Original languageEnglish (US)
Title of host publicationECS Transactions - ISTC/CSTIC 2009 (CISTC)
Pages465-471
Number of pages7
Edition1 PART 1
DOIs
StatePublished - 2009
Externally publishedYes
EventISTC/CSTIC 2009 (CISTC) - Shanghai, China
Duration: Mar 19 2009Mar 20 2009

Publication series

NameECS Transactions
Number1 PART 1
Volume18
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherISTC/CSTIC 2009 (CISTC)
Country/TerritoryChina
CityShanghai
Period3/19/093/20/09

ASJC Scopus subject areas

  • General Engineering

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