Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process

Xiaoyan Liao; Yun Zhuang; Leonard J. Borucki; Jiang Cheng; Siannie Theng; Toranosuke Ashizawa; Ara Philipossian

doi:10.7567/JJAP.52.018001

Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process

Xiaoyan Liao, Yun Zhuang, Leonard J. Borucki, Jiang Cheng, Siannie Theng, Toranosuke Ashizawa, Ara Philipossian

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000™ K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.

Original language	English (US)
Article number	018001
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	1
DOIs	https://doi.org/10.7567/JJAP.52.018001
State	Published - Jan 2013
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAP.52.018001

Cite this

@article{5057ddd27dbd4b15871fc8bf9f158551,

title = "Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process",

abstract = "The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow{\textregistered} IC1000{\texttrademark} K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.",

author = "Xiaoyan Liao and Yun Zhuang and Borucki, {Leonard J.} and Jiang Cheng and Siannie Theng and Toranosuke Ashizawa and Ara Philipossian",

year = "2013",

month = jan,

doi = "10.7567/JJAP.52.018001",

language = "English (US)",

volume = "52",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process

AU - Liao, Xiaoyan

AU - Zhuang, Yun

AU - Borucki, Leonard J.

AU - Cheng, Jiang

AU - Theng, Siannie

AU - Ashizawa, Toranosuke

AU - Philipossian, Ara

PY - 2013/1

Y1 - 2013/1

N2 - The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000™ K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.

AB - The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000™ K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.

UR - http://www.scopus.com/inward/record.url?scp=84872306358&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872306358&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.018001

DO - 10.7567/JJAP.52.018001

M3 - Article

AN - SCOPUS:84872306358

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 1

M1 - 018001

ER -

Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this