TY - JOUR
T1 - Effect of pad surface micro-texture on removal rate during interlayer dielectric chemical mechanical planarization process
AU - Liao, Xiaoyan
AU - Zhuang, Yun
AU - Borucki, Leonard J.
AU - Cheng, Jiang
AU - Theng, Siannie
AU - Ashizawa, Toranosuke
AU - Philipossian, Ara
PY - 2013/1
Y1 - 2013/1
N2 - The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000™ K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.
AB - The effect of pad surface micro-texture on removal rate in interlayer dielectric chemical mechanical planarization was investigated. Blanket 200-mm oxide wafers were polished on a Dow® IC1000™ K-groove pad conditioned at two different conditioning forces. The coefficient of friction increased slightly (by 7%) while removal rate increased dramatically (by 65%) when conditioning force was increased from 26.7 to 44.5 N. Pad surface micro-texture analysis results showed that pad surface contact area decreased dramatically (by 71%) at the conditioning force of 44.5 N, leading to a sharp increase in the local contact pressure and resulting in a significantly higher removal rate.
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U2 - 10.7567/JJAP.52.018001
DO - 10.7567/JJAP.52.018001
M3 - Article
AN - SCOPUS:84872306358
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
IS - 1
M1 - 018001
ER -