Abstract
The impact of parameters such as groove design, wafer pressure and relative pad-wafer velocity on average coefficient of friction (COF) and ILD removal rates of chemical and mechanical polishing (CMP) was investigated. The Sommerfield number, used in conjunction with COF, presented a useful method of describing the extent of contact in the pad-slurry-wafer interface. It was found that the amount of material removed was directly influenced by average COF. Combined grooving patterns, consisting of spiral and logarithmic grooves, influenced several key attributes of ILD polish in terms of slurry retention, tribological mechanism and material removal rates.
| Original language | English (US) |
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| Pages | 166-173 |
| Number of pages | 8 |
| State | Published - 2003 |
| Event | Chemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003 |
Other
| Other | Chemical Mechanical Planarization VI - Proceddings of the International Symposium |
|---|---|
| Country/Territory | United States |
| City | Orlando, FL. |
| Period | 10/12/03 → 10/17/03 |
ASJC Scopus subject areas
- General Engineering