Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

H. Almasi; M. Xu; Y. Xu; T. Newhouse-Illige; W. G. Wang

doi:10.1063/1.4958732

Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

H. Almasi, M. Xu, Y. Xu, T. Newhouse-Illige, W. G. Wang

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.

Original language	English (US)
Article number	032401
Journal	Applied Physics Letters
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.4958732
State	Published - Jul 18 2016
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions",

abstract = "The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.",

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AU - Almasi, H.

AU - Xu, M.

AU - Xu, Y.

AU - Newhouse-Illige, T.

AU - Wang, W. G.

N1 - Funding Information: This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, and by the National Science Foundation (ECCS-1310338). Publisher Copyright: © 2016 Author(s).

PY - 2016/7/18

Y1 - 2016/7/18

N2 - The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.

AB - The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magnetic tunneling junction with MgO barriers was investigated. Unlike thick Mo layers that exhibited a strong (110) crystalline texture, the inserted Mo layer between Ta/CoFeB had little negative influence on the crystallization of CoFe (001), therefore combining the advantages of Mo as a good thermal barrier and Ta as a good boron sink. For optimized Mo dusting thickness, a large tunneling magnetoresistance of 208% was achieved in perpendicular magnetic tunneling junctions with superior thermal stability at 500 °C.

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Effect of Mo insertion layers on the magnetoresistance and perpendicular magnetic anisotropy in Ta/CoFeB/MgO junctions

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