Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

Mukund Bapna; Brad Parks; Samuel Oberdick; Hamid Almasi; Congli Sun; Paul Voyles; Weigang Wang; Sara A. Majetich

doi:10.1016/j.jmmm.2019.03.005

Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

Mukund Bapna, Brad Parks, Samuel Oberdick, Hamid Almasi, Congli Sun, Paul Voyles, Weigang Wang, Sara A. Majetich

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Co ₂₀ Fe ₆₀ B ₂₀ /MgO/Co ₂₀ Fe ₆₀ B ₂₀ perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.

Original language	English (US)
Pages (from-to)	34-41
Number of pages	8
Journal	Journal of Magnetism and Magnetic Materials
Volume	483
DOIs	https://doi.org/10.1016/j.jmmm.2019.03.005
State	Published - Aug 1 2019
Externally published	Yes

Keywords

Magnetic tunnel junction
Perpendicular magnetic anisotropy
Scanning probe microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2019.03.005

Cite this

@article{926ca0a10f4f483fb8f57f4ac7d5061a,

title = "Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy",

abstract = " Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.",

keywords = "Magnetic tunnel junction, Perpendicular magnetic anisotropy, Scanning probe microscopy",

author = "Mukund Bapna and Brad Parks and Samuel Oberdick and Hamid Almasi and Congli Sun and Paul Voyles and Weigang Wang and Majetich, {Sara A.}",

note = "Publisher Copyright: {\textcopyright} 2019",

year = "2019",

month = aug,

day = "1",

doi = "10.1016/j.jmmm.2019.03.005",

language = "English (US)",

volume = "483",

pages = "34--41",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

AU - Bapna, Mukund

AU - Parks, Brad

AU - Oberdick, Samuel

AU - Almasi, Hamid

AU - Sun, Congli

AU - Voyles, Paul

AU - Wang, Weigang

AU - Majetich, Sara A.

PY - 2019/8/1

Y1 - 2019/8/1

N2 - Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.

AB - Co 20 Fe 60 B 20 /MgO/Co 20 Fe 60 B 20 perpendicular magnetic tunnel junctions with Mo seed and capping layers were patterned into sub-100 nm diameter devices. The resulting devices were imaged in plan view by scanning electron microscopy and in cross-section by scanning transmission electron microscopy. The tunnel magnetoresistance was ∼125%. The coercivity dropped off below 35 nm, and the stray field increased with decreasing diameter. The voltage controlled magnetic anisotropy effect was observed for all sizes, though it was convoluted with thermal and stray field effects for the smaller diameters.

KW - Magnetic tunnel junction

KW - Perpendicular magnetic anisotropy

KW - Scanning probe microscopy

UR - http://www.scopus.com/inward/record.url?scp=85063194676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063194676&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2019.03.005

DO - 10.1016/j.jmmm.2019.03.005

M3 - Article

AN - SCOPUS:85063194676

SN - 0304-8853

VL - 483

SP - 34

EP - 41

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this

Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this

Effect of Mo capping in sub-100 nm CoFeB-MgO tunnel junctions with perpendicular magnetic anisotropy