@inproceedings{f51f7af1a2534b53b86e7ad6b7b305c4,
title = "Effect of KIO3 on electrochemical mechanical removal of Ta/TaN films",
abstract = "This paper reports results obtained from the polishing of Ta and TaN films at low pressures (∼0.5psi) in solutions containing 2,5 dihydroxy benzene sulfonic acid (DBSA) as a tantalum complexant, potassium iodate (KIO 3) as an oxidant and a small amount of silica particles (∼0.1wt%), under galvanostatic conditions. Variables such as pH, KIO 3 concentration and current density have been investigated to develop an optimized formulation. Solution containing 0.1M DBSA, 0.05M KIO3 and 0.1% silica particles removes tantalum and tantalum nitride at the rates of ∼170{\AA}/min and ∼200{\AA}/min, respectively at 1mA/cm2 current density. Under the same conditions, Ta/Cu selectivity of ∼0.8:1 and TaN/Cu selectivity of ∼0.9:1 were achieved.",
author = "R. Govindarajan and N. Venkataraman and S. Raghavan",
year = "2009",
doi = "10.1149/1.3123772",
language = "English (US)",
isbn = "9781607680734",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "31--38",
booktitle = "Chemical Mechanical Polishing 10",
edition = "7",
}