Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

T. Shang; H. L. Yang; Q. F. Zhan; Z. H. Zuo; Y. L. Xie; L. P. Liu; S. L. Zhang; Y. Zhang; H. H. Li; B. M. Wang; Y. H. Wu; S. Zhang; Run Wei Li

doi:10.1063/1.4964114

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

T. Shang, H. L. Yang, Q. F. Zhan, Z. H. Zuo, Y. L. Xie, L. P. Liu, S. L. Zhang, Y. Zhang, H. H. Li, B. M. Wang, Y. H. Wu, S. Zhang, Run Wei Li

Physics

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Abstract

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir₂₀Mn₈₀/Y₃Fe₅O₁₂ (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

Original language	English (US)
Article number	133901
Journal	Journal of Applied Physics
Volume	120
Issue number	13
DOIs	https://doi.org/10.1063/1.4964114
State	Published - Oct 7 2016

ASJC Scopus subject areas

General Physics and Astronomy

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Shang, T., Yang, H. L., Zhan, Q. F., Zuo, Z. H., Xie, Y. L., Liu, L. P., Zhang, S. L., Zhang, Y., Li, H. H., Wang, B. M., Wu, Y. H., Zhang, S., & Li, R. W. (2016). Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures. Journal of Applied Physics, 120(13), Article 133901. https://doi.org/10.1063/1.4964114

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title = "Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures",

abstract = "We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.",

author = "T. Shang and Yang, {H. L.} and Zhan, {Q. F.} and Zuo, {Z. H.} and Xie, {Y. L.} and Liu, {L. P.} and Zhang, {S. L.} and Y. Zhang and Li, {H. H.} and Wang, {B. M.} and Wu, {Y. H.} and S. Zhang and Li, {Run Wei}",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = oct,

day = "7",

doi = "10.1063/1.4964114",

language = "English (US)",

volume = "120",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "13",

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TY - JOUR

T1 - Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

AU - Shang, T.

AU - Yang, H. L.

AU - Zhan, Q. F.

AU - Zuo, Z. H.

AU - Xie, Y. L.

AU - Liu, L. P.

AU - Zhang, S. L.

AU - Zhang, Y.

AU - Li, H. H.

AU - Wang, B. M.

AU - Wu, Y. H.

AU - Zhang, S.

AU - Li, Run Wei

PY - 2016/10/7

Y1 - 2016/10/7

N2 - We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

AB - We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The AHR of Pt/IrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.

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SN - 0021-8979

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 13

M1 - 133901

ER -

Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

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