Effect of deep-level defects on surface recombination velocity at the interface between silicon and dielectric films

Babak Imangholi; Fee Li Lie; Harold G. Parks; Anthony J. Muscat

doi:10.1109/TED.2010.2041283

Effect of deep-level defects on surface recombination velocity at the interface between silicon and dielectric films

Babak Imangholi, Fee Li Lie, Harold G. Parks, Anthony J. Muscat

Chemical and Environmental Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The surface recombination velocity (SRV) characteristic of deep-level defects at Si interfaces with dielectric thin films was obtained from conductance measurements on metal-insulator-semiconductor capacitor (MISCAP) devices. The dielectrics in contact with Si were thermal SiO₂ (Tox), chemical SiO₂, and atomic layer deposition (ALD) Al₂O ₃, which were annealed and exposed to a low flux of X-rays. A modified conductance technique was developed in which a large ac signal was superimposed on a dc bias and the surface potential was swept across the band gap of aMISCAP from near accumulation to deep depletion. The frequency-dependent energy loss due to all defects across the band gap and their correlations were measured using the effective equivalent conductance. A model containing one resistor and one capacitor was sufficient to describe the frequencydependent energy losses due to defects with similar activities. The total SRV was 112 ± 19 cm/s for Si/Tox, 1045 ± 150 cm/s for Si/chemical SiO ₂/Al₂O₃, and 578 ± 96 cm/s for Si/Al₂O₃ interfaces. After forming gas annealing at 400 °C, the SRV decreased to ∼1 cm/s for both Si/Tox and Si/chemical SiO₂/Al₂O₃ and 47 ± 6 cm/s for Si/Al₂O₃. Vacuum annealing improved the Si/chemical SiO₂/Al₂O₃ interface but had an adverse effect on Si/Al₂O₃. Soft X-ray exposure increased the SRV of both Si/chemical SiO₂/Al₂O₃ and Si/Al ₂O₃.

Original language	English (US)
Article number	5418959
Pages (from-to)	877-889
Number of pages	13
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	4
DOIs	https://doi.org/10.1109/TED.2010.2041283
State	Published - Apr 2010

Keywords

Defect
Interface
Metal-insulator-semiconductor capacitor (MISCAP) device
Surface recombination velocity (SRV)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2010.2041283

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@article{c5954e81ce134c3497c0703e6121edcb,

title = "Effect of deep-level defects on surface recombination velocity at the interface between silicon and dielectric films",

abstract = "The surface recombination velocity (SRV) characteristic of deep-level defects at Si interfaces with dielectric thin films was obtained from conductance measurements on metal-insulator-semiconductor capacitor (MISCAP) devices. The dielectrics in contact with Si were thermal SiO2 (Tox), chemical SiO2, and atomic layer deposition (ALD) Al2O 3, which were annealed and exposed to a low flux of X-rays. A modified conductance technique was developed in which a large ac signal was superimposed on a dc bias and the surface potential was swept across the band gap of aMISCAP from near accumulation to deep depletion. The frequency-dependent energy loss due to all defects across the band gap and their correlations were measured using the effective equivalent conductance. A model containing one resistor and one capacitor was sufficient to describe the frequencydependent energy losses due to defects with similar activities. The total SRV was 112 ± 19 cm/s for Si/Tox, 1045 ± 150 cm/s for Si/chemical SiO 2/Al2O3, and 578 ± 96 cm/s for Si/Al2O3 interfaces. After forming gas annealing at 400 °C, the SRV decreased to ∼1 cm/s for both Si/Tox and Si/chemical SiO2/Al2O3 and 47 ± 6 cm/s for Si/Al2O3. Vacuum annealing improved the Si/chemical SiO2/Al2O3 interface but had an adverse effect on Si/Al2O3. Soft X-ray exposure increased the SRV of both Si/chemical SiO2/Al2O3 and Si/Al 2O3.",

keywords = "Defect, Interface, Metal-insulator-semiconductor capacitor (MISCAP) device, Surface recombination velocity (SRV)",

author = "Babak Imangholi and Lie, {Fee Li} and Parks, {Harold G.} and Muscat, {Anthony J.}",

note = "Funding Information: Manuscript received August 27, 2009; revised January 4, 2010. First published February 22, 2010; current version published April 2, 2010. This work was supported by Intel Corporation. The review of this paper was arranged by Editor H. S. Momose.",

year = "2010",

month = apr,

doi = "10.1109/TED.2010.2041283",

language = "English (US)",

volume = "57",

pages = "877--889",

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T1 - Effect of deep-level defects on surface recombination velocity at the interface between silicon and dielectric films

AU - Imangholi, Babak

AU - Lie, Fee Li

AU - Parks, Harold G.

AU - Muscat, Anthony J.

N1 - Funding Information: Manuscript received August 27, 2009; revised January 4, 2010. First published February 22, 2010; current version published April 2, 2010. This work was supported by Intel Corporation. The review of this paper was arranged by Editor H. S. Momose.

PY - 2010/4

Y1 - 2010/4

N2 - The surface recombination velocity (SRV) characteristic of deep-level defects at Si interfaces with dielectric thin films was obtained from conductance measurements on metal-insulator-semiconductor capacitor (MISCAP) devices. The dielectrics in contact with Si were thermal SiO2 (Tox), chemical SiO2, and atomic layer deposition (ALD) Al2O 3, which were annealed and exposed to a low flux of X-rays. A modified conductance technique was developed in which a large ac signal was superimposed on a dc bias and the surface potential was swept across the band gap of aMISCAP from near accumulation to deep depletion. The frequency-dependent energy loss due to all defects across the band gap and their correlations were measured using the effective equivalent conductance. A model containing one resistor and one capacitor was sufficient to describe the frequencydependent energy losses due to defects with similar activities. The total SRV was 112 ± 19 cm/s for Si/Tox, 1045 ± 150 cm/s for Si/chemical SiO 2/Al2O3, and 578 ± 96 cm/s for Si/Al2O3 interfaces. After forming gas annealing at 400 °C, the SRV decreased to ∼1 cm/s for both Si/Tox and Si/chemical SiO2/Al2O3 and 47 ± 6 cm/s for Si/Al2O3. Vacuum annealing improved the Si/chemical SiO2/Al2O3 interface but had an adverse effect on Si/Al2O3. Soft X-ray exposure increased the SRV of both Si/chemical SiO2/Al2O3 and Si/Al 2O3.

AB - The surface recombination velocity (SRV) characteristic of deep-level defects at Si interfaces with dielectric thin films was obtained from conductance measurements on metal-insulator-semiconductor capacitor (MISCAP) devices. The dielectrics in contact with Si were thermal SiO2 (Tox), chemical SiO2, and atomic layer deposition (ALD) Al2O 3, which were annealed and exposed to a low flux of X-rays. A modified conductance technique was developed in which a large ac signal was superimposed on a dc bias and the surface potential was swept across the band gap of aMISCAP from near accumulation to deep depletion. The frequency-dependent energy loss due to all defects across the band gap and their correlations were measured using the effective equivalent conductance. A model containing one resistor and one capacitor was sufficient to describe the frequencydependent energy losses due to defects with similar activities. The total SRV was 112 ± 19 cm/s for Si/Tox, 1045 ± 150 cm/s for Si/chemical SiO 2/Al2O3, and 578 ± 96 cm/s for Si/Al2O3 interfaces. After forming gas annealing at 400 °C, the SRV decreased to ∼1 cm/s for both Si/Tox and Si/chemical SiO2/Al2O3 and 47 ± 6 cm/s for Si/Al2O3. Vacuum annealing improved the Si/chemical SiO2/Al2O3 interface but had an adverse effect on Si/Al2O3. Soft X-ray exposure increased the SRV of both Si/chemical SiO2/Al2O3 and Si/Al 2O3.

KW - Defect

KW - Interface

KW - Metal-insulator-semiconductor capacitor (MISCAP) device

KW - Surface recombination velocity (SRV)

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SN - 0018-9383

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SP - 877

EP - 889

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 5418959

ER -

Effect of deep-level defects on surface recombination velocity at the interface between silicon and dielectric films

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Keywords

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