Abstract
The present study presents the effect of applied wafer pressure, slurry flow rate and degree of groove slanting on the overall hydrodynamics of a typical chemical mechanical planarization (CMP) process by quantifying the slurry film thickness in pad-wafer region. This is done via dual emission ultraviolet (UV) enhanced fluorescence measurements, which use fluorescent dyes on the slurry to relate the intensity of the light to the film thickness. Slurry film measurements were taken in-situ at several wafer pressure, slurry flow rate and groove patterns in a 200-mm CMP tool. The film thickness measurements obtained in this study showed a correlation between groove designs and the amount of slurry transported from the grooves to the pad land areas. Also this study corroborates a previously hypothesized slurry flow mechanism generated when the slanted groove pads were used during copper CMP.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2224-2232 |
| Number of pages | 9 |
| Journal | Thin Solid Films |
| Volume | 520 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jan 1 2012 |
Keywords
- Chemical mechanical polishing
- Concentric slanted pad grooves
- Pad groove designs
- Slurry film thickness
- Slurry flow
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry