Effect of cerium oxide particle sizes in oxide chemical mechanical planarization

Yasa Sampurno, Fransisca Sudargho, Yun Zhuang, Toranosuke Ashizawa, Hiroyuki Morishima, Ara Philipossian

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


This study explored the effect of different cerium oxide abrasive particle sizes in chemical mechanical planarization of 200 mm blanket plasma-enhanced tetraethylorthosilicate wafers. All polishing experiments were done with a polisher and tribometer capable of measuring shear force and down force in real-time. Coefficient of friction and removal rate were found to correlate well with the slurry median particle size distribution. Removal rate modeling based on particle size was explored to support the interpretation of the experimental results.

Original languageEnglish (US)
Pages (from-to)H191-H194
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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