Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

Y. Tan; B. Johnson; S. Seraphin; J. Jiao; M. J. Anc; L. P. Allen

doi:10.1023/A:1012457627561

Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

Y. Tan, B. Johnson, S. Seraphin, J. Jiao, M. J. Anc, L. P. Allen

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4 Scopus citations

Abstract

The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 kev with doses of 0.5, 0.83 and 1.8 × 10¹⁸ cm^-2 oxygen followed by annealing treatment at different ramp rates (1 °C min^-1 or 5°C min^-1), temperatures (1310 °C or 1350 °C), and holding times (0 or 5 h). The results show that a higher annealing temperature (∼ 1350 °C) with a longer holding time improves the quality of the top Si layers and the smoothness of the interfaces in low-dose SIMOX wafers. A slow thermal ramp rate results in sharp interfaces but leads to a high density of Si islands in the buried oxide (BOX) layer. Chemical etching experiment performed on the top Si layer of a low-dose SIMOX shows pipeline structure indicating the inhomogeneous chemical reactivity of the top Si layer.

Original language	English (US)
Pages (from-to)	537-542
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	12
Issue number	9
DOIs	https://doi.org/10.1023/A:1012457627561
State	Published - Sep 2001
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV",

abstract = "The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 kev with doses of 0.5, 0.83 and 1.8 × 1018 cm-2 oxygen followed by annealing treatment at different ramp rates (1 °C min-1 or 5°C min-1), temperatures (1310 °C or 1350 °C), and holding times (0 or 5 h). The results show that a higher annealing temperature (∼ 1350 °C) with a longer holding time improves the quality of the top Si layers and the smoothness of the interfaces in low-dose SIMOX wafers. A slow thermal ramp rate results in sharp interfaces but leads to a high density of Si islands in the buried oxide (BOX) layer. Chemical etching experiment performed on the top Si layer of a low-dose SIMOX shows pipeline structure indicating the inhomogeneous chemical reactivity of the top Si layer.",

author = "Y. Tan and B. Johnson and S. Seraphin and J. Jiao and Anc, {M. J.} and Allen, {L. P.}",

note = "Funding Information: This work was funded in part by Ibis Technology Corporation and the National Science Foundation, Grant number DMR 0072955",

year = "2001",

month = sep,

doi = "10.1023/A:1012457627561",

language = "English (US)",

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pages = "537--542",

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TY - JOUR

T1 - Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

AU - Tan, Y.

AU - Johnson, B.

AU - Seraphin, S.

AU - Jiao, J.

AU - Anc, M. J.

AU - Allen, L. P.

N1 - Funding Information: This work was funded in part by Ibis Technology Corporation and the National Science Foundation, Grant number DMR 0072955

PY - 2001/9

Y1 - 2001/9

N2 - The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 kev with doses of 0.5, 0.83 and 1.8 × 1018 cm-2 oxygen followed by annealing treatment at different ramp rates (1 °C min-1 or 5°C min-1), temperatures (1310 °C or 1350 °C), and holding times (0 or 5 h). The results show that a higher annealing temperature (∼ 1350 °C) with a longer holding time improves the quality of the top Si layers and the smoothness of the interfaces in low-dose SIMOX wafers. A slow thermal ramp rate results in sharp interfaces but leads to a high density of Si islands in the buried oxide (BOX) layer. Chemical etching experiment performed on the top Si layer of a low-dose SIMOX shows pipeline structure indicating the inhomogeneous chemical reactivity of the top Si layer.

AB - The structure of low-dose SIMOX wafers as a function of annealing conditions has been studied using TEM. A set of samples were implanted at 190 kev with doses of 0.5, 0.83 and 1.8 × 1018 cm-2 oxygen followed by annealing treatment at different ramp rates (1 °C min-1 or 5°C min-1), temperatures (1310 °C or 1350 °C), and holding times (0 or 5 h). The results show that a higher annealing temperature (∼ 1350 °C) with a longer holding time improves the quality of the top Si layers and the smoothness of the interfaces in low-dose SIMOX wafers. A slow thermal ramp rate results in sharp interfaces but leads to a high density of Si islands in the buried oxide (BOX) layer. Chemical etching experiment performed on the top Si layer of a low-dose SIMOX shows pipeline structure indicating the inhomogeneous chemical reactivity of the top Si layer.

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DO - 10.1023/A:1012457627561

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EP - 542

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 9

ER -

Effect of annealing conditions on the formation of low-dose SIMOX structures implanted at 190 keV

Abstract

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